Abstract
We control the purity, lifetime, and brightness of strain-localized GaSe single photon emitters with electrostatic doping. At the charge neutrality point, these parameters are improved by 50%, 21%, and 43% respectively compared to ungated emitters.
| Original language | English |
|---|---|
| Title of host publication | CLEO |
| Subtitle of host publication | Fundamental Science, CLEO:FS 2023 |
| Publisher | Optical Society of America |
| ISBN (Electronic) | 9781957171258 |
| DOIs | |
| State | Published - 2023 |
| Event | CLEO: Fundamental Science, CLEO:FS 2023 - Part of Conference on Lasers and Electro-Optics 2023 - San Jose, United States Duration: May 7 2023 → May 12 2023 |
Publication series
| Name | CLEO: Fundamental Science, CLEO:FS 2023 |
|---|
Conference
| Conference | CLEO: Fundamental Science, CLEO:FS 2023 - Part of Conference on Lasers and Electro-Optics 2023 |
|---|---|
| Country/Territory | United States |
| City | San Jose |
| Period | 05/7/23 → 05/12/23 |
Funding
This work was supported by the National Science Foundation (NSF) under Grant No. (1945364) and the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award DE-SC0021064. The photoluminescence microscopy was supported by the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, Office of Science User Facility at Oak Ridge National Laboratory.