TY - GEN
T1 - Electrically injected AlGaN nanowire deep ultraviolet lasers
AU - Mi, Z.
AU - Zhao, S.
AU - Liu, X.
AU - Woo, S. Y.
AU - Bugnet, M.
AU - Botton, G. A.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2017/1/23
Y1 - 2017/1/23
N2 - We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.
AB - We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.
UR - http://www.scopus.com/inward/record.url?scp=85014158534&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2016.7831112
DO - 10.1109/IPCon.2016.7831112
M3 - Conference contribution
AN - SCOPUS:85014158534
T3 - 2016 IEEE Photonics Conference, IPC 2016
SP - 311
EP - 312
BT - 2016 IEEE Photonics Conference, IPC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 29th IEEE Photonics Conference, IPC 2016
Y2 - 2 October 2016 through 6 October 2016
ER -