Electrically injected AlGaN nanowire deep ultraviolet lasers

Z. Mi, S. Zhao, X. Liu, S. Y. Woo, M. Bugnet, G. A. Botton

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the demonstration of AlGaN nanowire lasers in the ultraviolet (UV)-B and UV-C bands. The AlGaN nanowires were grown directly on Si substrate and were characterized by the presence of quantum-dot-like nanostructures. At room temperature, the lasing threshold was measured to be ∼30 μA.

Original languageEnglish
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages311-312
Number of pages2
ISBN (Electronic)9781509019069
DOIs
StatePublished - Jan 23 2017
Externally publishedYes
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: Oct 2 2016Oct 6 2016

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Conference

Conference29th IEEE Photonics Conference, IPC 2016
Country/TerritoryUnited States
CityWaikoloa
Period10/2/1610/6/16

Fingerprint

Dive into the research topics of 'Electrically injected AlGaN nanowire deep ultraviolet lasers'. Together they form a unique fingerprint.

Cite this