Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi-2D h-BN/1T-TaS₂ Field Effect Devices

Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density-waves. Here, we report that perpendicular electric and magnetic fields can be utilized to tune the charge-density-wave transport in the quasi-two-dimensional material 1T-polytype tantalum disulfide. Using hexagonal boron nitride encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold—behavior distinct from quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the incommensurate-to-nearly commensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron–lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments.