Electrical property measurements of Cr-N codoped TiO2 epitaxial thin films grown by pulsed laser deposition

J. Jaćimović, R. Gaál, A. Magrez, L. Forró, M. Regmi, Gyula Eres

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Abstract

The temperature dependent resistivity and thermo-electric power of Cr-N codoped TiO2 were compared with that of single element N and Cr doped and undoped TiO2 using epitaxial anatase thin films grown by pulsed laser deposition on (100) LaAlO3 substrates. The resistivity plots and especially the thermoelectric power data confirm that codoping is not a simple sum of single element doping. However, the negative sign of the Seebeck coefficient indicates electron dominated transport independent of doping. The narrowing distinction among the effects of different doping methods combined with increasing resistivity of the films with improving crystalline quality of TiO2 suggest that structural defects play a critical role in the doping process.

Original languageEnglish
Article number172108
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
StatePublished - Apr 29 2013

Funding

The work in Lausanne was supported by the Swiss NSF through its research network “MaNEP.” The work at Oak Ridge National Laboratory was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division. The authors thank Endre Horváth for fruitful discussions.

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