Electrical properties of Pt/SrBi₂Ta₂O₉/CeO₂/SiO ₂/Si structure for nondestructive readout memory

Memory window and leakage current density of Pt/SrBi₂Ta₂O₉/CeO₂/SiO ₂/Si structure have been investigated for non destructive read out memory. Coercive field that decisively affects on the memory window becomes greater by the interposition of the CeO₂ insulator between SrBi₂Ta₂O₉ and SiO₂ and thus the memory window also increases with an electric field to the SrBi₂Ta₂O₉. A typical value of memory window for Pt/SrBi₂Ta₂O₉(140nm)/CeO₂/SiO ₂/Si is in the range of 0.5 - 3.0V, which is high enough for the non destructive read out memory, at the applied voltage of 3 - 9V. The leakage current density is remained at 3 × 10^-8 A/cm² until the applied voltage increases up to 10V.