Electrical conductivity measurements in a GeSeTi system

Madhavi Zope; B. D. Muragi; J. K. Zope

doi:10.1016/0022-3093(88)90198-6

Electrical conductivity measurements in a GeSeTi system

Madhavi Zope, B. D. Muragi, J. K. Zope

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21 Scopus citations

Abstract

The I - V characteristics and dc conductivity measurements of bulk Ge₁₀Se_90-xTl_x with x = 1 to 9 have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of thallium (Tl), which creates charged centers inside the bulk of the material. The decrease in activation energy with increase in thallium content has been discussed on the basis of formation of new charged centers Tl₄^- (C₂⁰)₃ in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centers Tl₄^- (C₂⁰)₃ and C₃⁺ for a Ge-Se- Tl system.

Original language	English
Pages (from-to)	195-200
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	103
Issue number	2-3
DOIs	https://doi.org/10.1016/0022-3093(88)90198-6
State	Published - Jul 1988
Externally published	Yes

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title = "Electrical conductivity measurements in a GeSeTi system",

abstract = "The I - V characteristics and dc conductivity measurements of bulk Ge10Se90-xTlx with x = 1 to 9 have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of thallium (Tl), which creates charged centers inside the bulk of the material. The decrease in activation energy with increase in thallium content has been discussed on the basis of formation of new charged centers Tl4- (C20)3 in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centers Tl4- (C20)3 and C3+ for a Ge-Se- Tl system.",

author = "Madhavi Zope and Muragi, {B. D.} and Zope, {J. K.}",

year = "1988",

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doi = "10.1016/0022-3093(88)90198-6",

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journal = "Journal of Non-Crystalline Solids",

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T1 - Electrical conductivity measurements in a GeSeTi system

AU - Zope, Madhavi

AU - Muragi, B. D.

AU - Zope, J. K.

PY - 1988/7

Y1 - 1988/7

N2 - The I - V characteristics and dc conductivity measurements of bulk Ge10Se90-xTlx with x = 1 to 9 have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of thallium (Tl), which creates charged centers inside the bulk of the material. The decrease in activation energy with increase in thallium content has been discussed on the basis of formation of new charged centers Tl4- (C20)3 in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centers Tl4- (C20)3 and C3+ for a Ge-Se- Tl system.

AB - The I - V characteristics and dc conductivity measurements of bulk Ge10Se90-xTlx with x = 1 to 9 have been experimentally investigated. The increase in room temperature conductivity is attributed to increase in the percentage of thallium (Tl), which creates charged centers inside the bulk of the material. The decrease in activation energy with increase in thallium content has been discussed on the basis of formation of new charged centers Tl4- (C20)3 in the mobility gap which shifts the Fermi level towards the valence band. An energy band diagram has been suggested on the basis of new charged centers Tl4- (C20)3 and C3+ for a Ge-Se- Tl system.

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U2 - 10.1016/0022-3093(88)90198-6

DO - 10.1016/0022-3093(88)90198-6

M3 - Article

AN - SCOPUS:0024052847

SN - 0022-3093

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SP - 195

EP - 200

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 2-3

ER -

Electrical conductivity measurements in a GeSeTi system

Abstract

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