Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

Sang Ho Kim; Han Ki Kim; Tae Yeon Seong

doi:10.1063/1.1839285

Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

Sang Ho Kim, Han Ki Kim, Tae Yeon Seong

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Abstract

We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

Original language	English
Article number	022101
Pages (from-to)	022101-1-022101-3
Journal	Applied Physics Letters
Volume	86
Issue number	2
DOIs	https://doi.org/10.1063/1.1839285
State	Published - Jan 10 2005
Externally published	Yes

Funding

This work was in part supported by the US Air Force Office of Scientific Research (AFOSR)∕Asian Office of Aerospace Research & Development (AOARD).

Funders	Funder number
AOARD
Asian Office of Aerospace Research & Development
Air Force Office of Scientific Research

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10.1063/1.1839285

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abstract = "We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.",

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AU - Seong, Tae Yeon

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N2 - We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

AB - We have investigated the effect of sulfide treatment on the electrical characteristics of Pt contacts on (000-1) n -type ZnO (~5× 1015 cm-3) single crystals. The Pt contact on conventionally cleaned ZnO surface shows an ohmic behavior. However, the contact produces a Schottky behavior, when the ZnO surface is etched in a boiling (NH4) 2 Sx solution. Measurements show that the Schottky barrier height, ideality factor, and leakage current at -5 V of the Pt contact on the sulfide-treated ZnO are 0.79 eV, 1.51, and 3.75× 10-10 A, respectively. Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) examinations indicate the formation of ZnS phase at the PtZnO interface. Based on the capacitance-voltage, AES, and XPS results, a possible mechanism for the formation of good Schottky contacts is given.

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Electrical characteristics of Pt Schottky contacts on sulfide-treated n -type ZnO

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