Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

V. Reddy; Sang Ho Kim; Tae Yeon Seong

doi:10.1007/s11664-004-0190-y

Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

V. Reddy, Sang Ho Kim, Tae Yeon Seong

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11 Scopus citations

Abstract

Titanium (15 nm)/aluminum (60 nm)/rhenium (20 nm)/gold (50 nm) ohmic contacts to moderately doped n-type GaN (4.07×10¹⁸ cm ^-3) have been investigated as a function of annealing temperature. It is shown that the current-voltage (I-V) characteristics of the contacts are improved upon annealing at temperatures in the range of 550-750°C. Specific contact resistance as low as 1.3×10^-6 Ωcm² is obtained after annealing at 750°C for 1 min in a nitrogen ambient. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the sample annealed at 750°C shifts toward the high binding side by 0.71 eV compared with that of the as-deposited one. It is also shown that the contact does not seriously suffer from thermal degradation even when annealed at 750°C for 30 min. Based on Auger electron spectroscopy (AES), glancing angle x-ray diffraction (GXRD), and XPS results, possible explanations for the annealing-induced improvement of the ohmic behavior are described and discussed.

Original language	English
Pages (from-to)	395-399
Number of pages	5
Journal	Journal of Electronic Materials
Volume	33
Issue number	5
DOIs	https://doi.org/10.1007/s11664-004-0190-y
State	Published - May 2004
Externally published	Yes

Funding

This work was supported by Korea Research Foundation Grant No. KRF-2003-042-D00131.

Funders	Funder number
Korea Research Foundation

Keywords

Auger electron spectroscopy
Glancing angle x-ray diffraction
Ohmic contacts
X-ray photoemission spectroscopy
n-type GaN

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10.1007/s11664-004-0190-y

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title = "Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN",

abstract = "Titanium (15 nm)/aluminum (60 nm)/rhenium (20 nm)/gold (50 nm) ohmic contacts to moderately doped n-type GaN (4.07×1018 cm -3) have been investigated as a function of annealing temperature. It is shown that the current-voltage (I-V) characteristics of the contacts are improved upon annealing at temperatures in the range of 550-750°C. Specific contact resistance as low as 1.3×10-6 Ωcm2 is obtained after annealing at 750°C for 1 min in a nitrogen ambient. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the sample annealed at 750°C shifts toward the high binding side by 0.71 eV compared with that of the as-deposited one. It is also shown that the contact does not seriously suffer from thermal degradation even when annealed at 750°C for 30 min. Based on Auger electron spectroscopy (AES), glancing angle x-ray diffraction (GXRD), and XPS results, possible explanations for the annealing-induced improvement of the ohmic behavior are described and discussed.",

keywords = "Auger electron spectroscopy, Glancing angle x-ray diffraction, Ohmic contacts, X-ray photoemission spectroscopy, n-type GaN",

author = "V. Reddy and Kim, {Sang Ho} and Seong, {Tae Yeon}",

year = "2004",

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doi = "10.1007/s11664-004-0190-y",

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T1 - Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

AU - Reddy, V.

AU - Kim, Sang Ho

AU - Seong, Tae Yeon

PY - 2004/5

Y1 - 2004/5

N2 - Titanium (15 nm)/aluminum (60 nm)/rhenium (20 nm)/gold (50 nm) ohmic contacts to moderately doped n-type GaN (4.07×1018 cm -3) have been investigated as a function of annealing temperature. It is shown that the current-voltage (I-V) characteristics of the contacts are improved upon annealing at temperatures in the range of 550-750°C. Specific contact resistance as low as 1.3×10-6 Ωcm2 is obtained after annealing at 750°C for 1 min in a nitrogen ambient. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the sample annealed at 750°C shifts toward the high binding side by 0.71 eV compared with that of the as-deposited one. It is also shown that the contact does not seriously suffer from thermal degradation even when annealed at 750°C for 30 min. Based on Auger electron spectroscopy (AES), glancing angle x-ray diffraction (GXRD), and XPS results, possible explanations for the annealing-induced improvement of the ohmic behavior are described and discussed.

AB - Titanium (15 nm)/aluminum (60 nm)/rhenium (20 nm)/gold (50 nm) ohmic contacts to moderately doped n-type GaN (4.07×1018 cm -3) have been investigated as a function of annealing temperature. It is shown that the current-voltage (I-V) characteristics of the contacts are improved upon annealing at temperatures in the range of 550-750°C. Specific contact resistance as low as 1.3×10-6 Ωcm2 is obtained after annealing at 750°C for 1 min in a nitrogen ambient. X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the sample annealed at 750°C shifts toward the high binding side by 0.71 eV compared with that of the as-deposited one. It is also shown that the contact does not seriously suffer from thermal degradation even when annealed at 750°C for 30 min. Based on Auger electron spectroscopy (AES), glancing angle x-ray diffraction (GXRD), and XPS results, possible explanations for the annealing-induced improvement of the ohmic behavior are described and discussed.

KW - Auger electron spectroscopy

KW - Glancing angle x-ray diffraction

KW - Ohmic contacts

KW - X-ray photoemission spectroscopy

KW - n-type GaN

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SN - 0361-5235

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

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Keywords

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