Electrical and optical properties of Al-doped ZnO films for organic light emitting devices with processing parameters

Youn Jeong Hong, Hye Jin Kim, Kyu Mann Lee, Sang Ho Kim, Yeong Cheol Kim, Chang Jung Kim, In Woo Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Al-doped Zinc Oxide (AZO) films is one of the most attractive materials for the transparent conducting oxide. In this study, The electrical and optical properties of Al-doped ZnO films were examined. The films were grown on glass substrates at RT and 300°C with various working pressures by using RF-magnetron sputtering. The crystal orientation, grain size, the surface roughness, and the sheet resistance of AZO films were changed with substrate temperature and working pressure. The (002) peak and (103) peak were preferentially oriented at RT and 300°C, respectively. The grain size and surface roughness increased with increasing working pressure. Electrical properties of the AZO films improved with increasing substrate temperature and working pressure. And optical properties of all AZO films indicated high transmittance regardless of processing conditions.

Original languageEnglish
Title of host publicationAD'07 - Proceedings of Asia Display 2007
Pages1483-1488
Number of pages6
StatePublished - 2007
Externally publishedYes
EventAsia Display 2007, AD'07 - Shanghai, China
Duration: Mar 12 2007Mar 16 2007

Publication series

NameAD'07 - Proceedings of Asia Display 2007
Volume2

Conference

ConferenceAsia Display 2007, AD'07
Country/TerritoryChina
CityShanghai
Period03/12/0703/16/07

Keywords

  • AZO (Al-doped ZnO)
  • Flat panel display
  • RF-sputtering
  • Transparent conducting oxide

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