Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO

Han Ki Kim; Sang Woo Kim; Beelyong Yang; Sang Ho Kim; Kwang Hoon Lee; Seung Hyun Ji; Young Soo Yoon

doi:10.1143/JJAP.45.1560

Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO

Han Ki Kim, Sang Woo Kim, Beelyong Yang, Sang Ho Kim, Kwang Hoon Lee, Seung Hyun Ji, Young Soo Yoon

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report on the electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated n-ZnO (1.5 × 10 ¹⁷cm^-3). Nonalloyed Ti/Au and Pt contacts on the Zn-terminated ZnO respectively exhibit ohmic and Schottky behavior owing to different work functions and out-diffusion characteristics. The nonalloyed Ti/Au contact reveals very linear current-voltage behavior with a specific contact resistivity of 2.2 × 10^-5 Ωcm². However, Pt contact shows Schottky behavior with Schottky barrier heights (SBHs) of 0.62 eV and 0.78 eV, obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. Using Auger electron spectroscopy (AES), we correlated the electrical properties of the nonalloyed Ti/Au ohmic and Pt Schottky contacts with the properties of the interface between the metal and ZnO.

Original language	English
Pages (from-to)	1560-1565
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	3 A
DOIs	https://doi.org/10.1143/JJAP.45.1560
State	Published - Mar 8 2006
Externally published	Yes

Keywords

Ohmic
Pt contact
Schottky contact
Ti/Au contact
ZnO

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@article{86c2c6b8bcb14e2086e4861f4c885c71,

title = "Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO",

abstract = "We report on the electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated n-ZnO (1.5 × 10 17cm-3). Nonalloyed Ti/Au and Pt contacts on the Zn-terminated ZnO respectively exhibit ohmic and Schottky behavior owing to different work functions and out-diffusion characteristics. The nonalloyed Ti/Au contact reveals very linear current-voltage behavior with a specific contact resistivity of 2.2 × 10-5 Ωcm2. However, Pt contact shows Schottky behavior with Schottky barrier heights (SBHs) of 0.62 eV and 0.78 eV, obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. Using Auger electron spectroscopy (AES), we correlated the electrical properties of the nonalloyed Ti/Au ohmic and Pt Schottky contacts with the properties of the interface between the metal and ZnO.",

keywords = "Ohmic, Pt contact, Schottky contact, Ti/Au contact, ZnO",

author = "Kim, {Han Ki} and Kim, {Sang Woo} and Beelyong Yang and Kim, {Sang Ho} and Lee, {Kwang Hoon} and Ji, {Seung Hyun} and Yoon, {Young Soo}",

year = "2006",

month = mar,

day = "8",

doi = "10.1143/JJAP.45.1560",

language = "English",

volume = "45",

pages = "1560--1565",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing",

number = "3 A",

}

TY - JOUR

T1 - Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO

AU - Kim, Han Ki

AU - Kim, Sang Woo

AU - Yang, Beelyong

AU - Kim, Sang Ho

AU - Lee, Kwang Hoon

AU - Ji, Seung Hyun

AU - Yoon, Young Soo

PY - 2006/3/8

Y1 - 2006/3/8

N2 - We report on the electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated n-ZnO (1.5 × 10 17cm-3). Nonalloyed Ti/Au and Pt contacts on the Zn-terminated ZnO respectively exhibit ohmic and Schottky behavior owing to different work functions and out-diffusion characteristics. The nonalloyed Ti/Au contact reveals very linear current-voltage behavior with a specific contact resistivity of 2.2 × 10-5 Ωcm2. However, Pt contact shows Schottky behavior with Schottky barrier heights (SBHs) of 0.62 eV and 0.78 eV, obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. Using Auger electron spectroscopy (AES), we correlated the electrical properties of the nonalloyed Ti/Au ohmic and Pt Schottky contacts with the properties of the interface between the metal and ZnO.

AB - We report on the electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated n-ZnO (1.5 × 10 17cm-3). Nonalloyed Ti/Au and Pt contacts on the Zn-terminated ZnO respectively exhibit ohmic and Schottky behavior owing to different work functions and out-diffusion characteristics. The nonalloyed Ti/Au contact reveals very linear current-voltage behavior with a specific contact resistivity of 2.2 × 10-5 Ωcm2. However, Pt contact shows Schottky behavior with Schottky barrier heights (SBHs) of 0.62 eV and 0.78 eV, obtained from current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. Using Auger electron spectroscopy (AES), we correlated the electrical properties of the nonalloyed Ti/Au ohmic and Pt Schottky contacts with the properties of the interface between the metal and ZnO.

KW - Ohmic

KW - Pt contact

KW - Schottky contact

KW - Ti/Au contact

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=33644930613&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.1560

DO - 10.1143/JJAP.45.1560

M3 - Article

AN - SCOPUS:33644930613

SN - 0021-4922

VL - 45

SP - 1560

EP - 1565

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 A

ER -

Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO

Abstract

Keywords

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