Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

C. Y. Chang; E. A. Douglas; J. Kim; L. Liu; C. F. Lo; B. H. Chu; D. J. Cheney; B. P. Gila; F. Ren; G. D. Via; D. A. Cullen; L. Zhou; D. J. Smith; S. Jang; S. J. Pearton

doi:10.1149/1.3629957

Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

C. Y. Chang
, E. A. Douglas
, J. Kim
, L. Liu
, C. F. Lo
, B. H. Chu
, D. J. Cheney
, B. P. Gila
, F. Ren
, G. D. Via
, D. A. Cullen
, L. Zhou
, D. J. Smith
, S. Jang
, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	89-100
Number of pages	12
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629957
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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10.1149/1.3629957

Cite this

Chang, C. Y., Douglas, E. A., Kim, J., Liu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D. J., Jang, S., & Pearton, S. J. (2011). Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 89-100). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629957

@inproceedings{61830b2c2c42479a968983ae8a4223a3,

title = "Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress",

abstract = "The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.",

author = "Chang, \{C. Y.\} and Douglas, \{E. A.\} and J. Kim and L. Liu and Lo, \{C. F.\} and Chu, \{B. H.\} and Cheney, \{D. J.\} and Gila, \{B. P.\} and F. Ren and Via, \{G. D.\} and Cullen, \{D. A.\} and L. Zhou and Smith, \{D. J.\} and S. Jang and Pearton, \{S. J.\}",

year = "2011",

doi = "10.1149/1.3629957",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "89--100",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Chang, CY, Douglas, EA, Kim, J, Liu, L, Lo, CF, Chu, BH, Cheney, DJ, Gila, BP, Ren, F, Via, GD, Cullen, DA, Zhou, L, Smith, DJ, Jang, S & Pearton, SJ 2011, Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 89-100, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629957

Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress. / Chang, C. Y.; Douglas, E. A.; Kim, J. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 89-100 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

AU - Chang, C. Y.

AU - Douglas, E. A.

AU - Kim, J.

AU - Liu, L.

AU - Lo, C. F.

AU - Chu, B. H.

AU - Cheney, D. J.

AU - Gila, B. P.

AU - Ren, F.

AU - Via, G. D.

AU - Cullen, D. A.

AU - Zhou, L.

AU - Smith, D. J.

AU - Jang, S.

AU - Pearton, S. J.

PY - 2011

Y1 - 2011

N2 - The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.

AB - The critical degradation voltage of AlGaN/GaN High Electron Mobility Transistors with Ni/Au gate during off-state electrical stress was studied. Devices with different gate length and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field-driven. The calculated degradation field was ∼1.8MV/cm by ATLAS simulations. Transmission Electron Microscopy imaging showed creation of defects under the gate after DC stress.

UR - https://www.scopus.com/pages/publications/84863160866

U2 - 10.1149/1.3629957

DO - 10.1149/1.3629957

M3 - Conference contribution

AN - SCOPUS:84863160866

SN - 9781566779067

T3 - ECS Transactions

SP - 89

EP - 100

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Electric field driven degradation of AlGaN/GaN high electron mobility transistors during off-state stress

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