Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chih Yang Chang; E. A. Douglas; Jinhyung Kim; Liu Lu; Chien Fong Lo; Byung Hwan Chu; D. J. Cheney; B. P. Gila; F. Ren; G. D. Via; David A. Cullen; Lin Zhou; David J. Smith; Soohwan Jang; S. J. Pearton

doi:10.1109/TDMR.2010.2103314

Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

Chih Yang Chang, E. A. Douglas, Jinhyung Kim, Liu Lu, Chien Fong Lo, Byung Hwan Chu, D. J. Cheney, B. P. Gila, F. Ren, G. D. Via, David A. Cullen, Lin Zhou, David J. Smith, Soohwan Jang, S. J. Pearton

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48 Scopus citations

Abstract

The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

Original language	English
Article number	5678846
Pages (from-to)	187-193
Number of pages	7
Journal	IEEE Transactions on Device and Materials Reliability
Volume	11
Issue number	1
DOIs	https://doi.org/10.1109/TDMR.2010.2103314
State	Published - Mar 2011

Funding

Manuscript received June 1, 2010; revised July 10, 2010, November 23, 2010, and December 16, 2010; accepted December 22, 2010. Date of publication January 6, 2011; date of current version March 9, 2011. This work was supported in part by the AFOSR MURI monitored by Kitt Reinhardt and in part by Arizona State University under AFRL Contract FA8650-08-C-1395 (monitored by C. Bozada, WPAFB).

Keywords

AlGaN
GaN
degradation
high-electron mobility transistor (HEMT)

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10.1109/TDMR.2010.2103314

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Chang, C. Y., Douglas, E. A., Kim, J., Lu, L., Lo, C. F., Chu, B. H., Cheney, D. J., Gila, B. P., Ren, F., Via, G. D., Cullen, D. A., Zhou, L., Smith, D. J., Jang, S., & Pearton, S. J. (2011). Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors. IEEE Transactions on Device and Materials Reliability, 11(1), 187-193. Article 5678846. https://doi.org/10.1109/TDMR.2010.2103314

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title = "Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors",

abstract = "The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.",

keywords = "AlGaN, GaN, degradation, high-electron mobility transistor (HEMT)",

author = "Chang, {Chih Yang} and Douglas, {E. A.} and Jinhyung Kim and Liu Lu and Lo, {Chien Fong} and Chu, {Byung Hwan} and Cheney, {D. J.} and Gila, {B. P.} and F. Ren and Via, {G. D.} and Cullen, {David A.} and Lin Zhou and Smith, {David J.} and Soohwan Jang and Pearton, {S. J.}",

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doi = "10.1109/TDMR.2010.2103314",

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Chang, CY, Douglas, EA, Kim, J, Lu, L, Lo, CF, Chu, BH, Cheney, DJ, Gila, BP, Ren, F, Via, GD, Cullen, DA, Zhou, L, Smith, DJ, Jang, S & Pearton, SJ 2011, 'Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors', IEEE Transactions on Device and Materials Reliability, vol. 11, no. 1, 5678846, pp. 187-193. https://doi.org/10.1109/TDMR.2010.2103314

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AU - Chang, Chih Yang

AU - Douglas, E. A.

AU - Kim, Jinhyung

AU - Lu, Liu

AU - Lo, Chien Fong

AU - Chu, Byung Hwan

AU - Cheney, D. J.

AU - Gila, B. P.

AU - Ren, F.

AU - Via, G. D.

AU - Cullen, David A.

AU - Zhou, Lin

AU - Smith, David J.

AU - Jang, Soohwan

AU - Pearton, S. J.

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N2 - The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

AB - The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.10.17 μ), drain bias voltage, and source/draingate contact distance. Devices with different gate lengths and gatedrain distances were found to exhibit the onset of degradation at different sourcedrain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.

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Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors

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