Abstract
Conventional direct joining technologies are difficult to use with silicon carbide (SiC) materials, especially for fiber composite forms of SiC, because of the harsh conditions required. To reduce the temperature and/or process time required for the direct joining process, an electric current–assisted joining (ECAJ) method was studied. Joining of low–resistivity grade, nitrogen doped β-SiC was demonstrated at a relatively low nominal temperature of 1750 °C with a 10 min hold by enhancing the passage of current through the material. The joining mechanism is discussed in terms of localized overheating and accelerated self-diffusion at the interface. In the case of joining at 2160 °C for 1 min, rapid crystal growth of textured SiC was found at the interface. This study indicates that rapid ECAJ-based direct joining is a practical and appropriate method for joining SiC-based materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3072-3081 |
| Number of pages | 10 |
| Journal | Journal of the European Ceramic Society |
| Volume | 41 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 2021 |
Funding
The study was supported by the US Department of Energy Office of Fusion Energy Sciences under contract DE-AC05-00OR22725 with UT-Battelle, LLC. Dr. Huaxin Li was supported by the program of China Scholarship Council (No. 201706690006). The authors are thankful to Austin Schumacher and Michael Trammell at Oak Ridge National Laboratory (ORNL) for their support of the joining experiments. The authors thank Frederick Wiffen and Peter Mouche at ORNL for technical review of the manuscript. Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05−00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (http://energy.gov/downloads/doe-public-access-plan). The study was supported by the US Department of Energy Office of Fusion Energy Sciences under contract DE-AC05-00OR22725 with UT-Battelle, LLC. Dr. Huaxin Li was supported by the program of China Scholarship Council (No. 201706690006 ). The authors are thankful to Austin Schumacher and Michael Trammell at Oak Ridge National Laboratory (ORNL) for their support of the joining experiments. The authors thank Frederick Wiffen and Peter Mouche at ORNL for technical review of the manuscript.
Keywords
- Diffusion bonding
- Electric current assisted joining
- Silicon carbide