Elastic and inelastic scattering in silicon using Mössbauer diffraction

M. L. Crow, G. Schupp, W. B. Yelon, J. G. Mullen, A. Djedid

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Mossbauer diffraction instrument at the Missouri University Research Reactor has been used to measure the elastic and inelastic contributions to the 444 Bragg reflection in dynamic silicon at room temperature. These measurements used the 46.5-keV gamma rays from high intensity183Ta sources cooled to liquid nitrogen temperature. The main feature of this study compared to similar measurements on silicon is the significantly improved momentum space resolution. ΔQ values of 0.011 Å-1 and 0.11 Å-1 were measured for the transverse and longitudinal directions, respectively.

Original languageEnglish
Pages (from-to)1517-1520
Number of pages4
JournalHyperfine Interactions
Volume29
Issue number1-4
DOIs
StatePublished - Feb 1986
Externally publishedYes

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