Abstract
Doping of polymeric semiconductors limits the miscibility between polymers and dopants. Although significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n-doped polymeric semiconductors are usually below 10 S cm−1. We report a different approach to overcome the miscibility issue by modulating the solution-state aggregates of conjugated polymers. We found that the solution-state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time. Modulating the solution-state polymer aggregates can directly influence their solid-state microstructures and miscibility with dopants. As a result, both high doping efficiency and high charge-carrier mobility were simultaneously obtained. The n-doped electrical conductivity of P(PzDPP-CT2) can be tuned up to 32.1 S cm−1. This method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.
Original language | English |
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Pages (from-to) | 8189-8197 |
Number of pages | 9 |
Journal | Angewandte Chemie - International Edition |
Volume | 60 |
Issue number | 15 |
DOIs | |
State | Published - Apr 6 2021 |
Funding
This work is supported by the National Natural Science Foundation of China (22075001), the Key-Area Research and Development Program of Guangdong Province (2019B010934001), the Beijing Natural Science Foundation (2192020). X.Y. is thankful for the support of the China Postdoctoral Science Foundation (8206200018, 8206300146). The computational part is supported by the High-performance Computing Platform of Peking University. S.Z., N.P., and X.G. are thankful for financial support from the U.S. Department of Energy, Office of Science, Office of Basic Energy Science under the award number DE-SC0019361, which made the neutron and X-ray scattering, and AFM-IR measurements possible. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility. A portion of this research used resources at the Spallation Neutron Source, a DOE Office of Science User Facility operated by the Oak Ridge National Laboratory.
Keywords
- dynamic behaviors
- n-doping
- semiconductors
- solution aggregates