Abstract
Epitaxial SrRu1−xSnxO3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu1−xSnxO3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.
Original language | English |
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Article number | 112404 |
Journal | Applied Physics Letters |
Volume | 119 |
Issue number | 11 |
DOIs | |
State | Published - Sep 13 2021 |
Funding
The authors thank Yanwen Zhang and William J. Weber for RBS measurements at the Ion Beam Materials Laboratory (ibml.utk.edu) located at the University of Tennessee, Knoxville. This work was supported by the U.S. Department of Energy, Basic Energy Sciences, Materials Sciences and Engineering Division and Scientific User Facilities Division. J.M.O. acknowledges support from Korea Basic Science Institute (National research Facilities and Equipment Center) grant funded by the Ministry of Education (Grant No. 2021R1A6C101A429) and National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2021R1F1A1056934).