Abstract
The emergence of silicon carbide- (SiC-) based power semiconductor switches with their superior features compares with silicon (Si) based switches has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices are more compact, lighter, and more efficient, so they are ideal for high-voltage power electronics applications, including hybrid electric vehicle (HEV) traction drives. In this paper, the effect of SiC-based power devices on HEV traction drive losses will be investigated. Reductions in heatsink size and device losses with the increase in the efficiency will be analyzed using an averaging model of a three-phase PWM inverter (TPPWMI). For more accurate results, device physics is taken into consideration to find the loss equations for the controllable switches.
| Original language | English |
|---|---|
| Pages | 1061-1066 |
| Number of pages | 6 |
| State | Published - 2001 |
| Externally published | Yes |
| Event | 27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 - Denver, CO, United States Duration: Nov 29 2001 → Dec 2 2001 |
Conference
| Conference | 27th Annual Conference of the IEEE Industrial Electronics Society IECON'2001 |
|---|---|
| Country/Territory | United States |
| City | Denver, CO |
| Period | 11/29/01 → 12/2/01 |
