Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC

Lauren Nuckols; Miguel L. Crespillo; Yang Yang; Ju Li; Eva Zarkadoula; Yanwen Zhang; William J. Weber

doi:10.1016/j.mtla.2021.101023

Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC

Lauren Nuckols, Miguel L. Crespillo, Yang Yang, Ju Li, Eva Zarkadoula, Yanwen Zhang, William J. Weber

Nanomaterials Theory Institute

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. The more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.

Original language	English
Article number	101023
Journal	Materialia
Volume	15
DOIs	https://doi.org/10.1016/j.mtla.2021.101023
State	Published - Mar 2021

Funding

This work was supported primarily by the Governor's Chair Program at the University of Tennessee. The irradiations and two temperature model calculations were supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division under contract number DE-AC05–00OR22725. The authors are grateful to C. Ostrouchov for pysrim calculation on radial distributions of displacements. JL and YY acknowledge support for IM3D simulations from the U.S. Department of Energy, Office of Nuclear Energy's NEUP Program under Grant No. DE-NE0008827.

Funders	Funder number
U.S. Department of Energy
Office of Science
Basic Energy Sciences
University of Tennessee
Division of Materials Sciences and Engineering	DE-NE0008827, DE-AC05–00OR22725

Keywords

Defects
Ion irradiation
Ionization
Irradiation effect
Silicon carbide

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10.1016/j.mtla.2021.101023

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title = "Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC",

abstract = "The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. The more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.",

keywords = "Defects, Ion irradiation, Ionization, Irradiation effect, Silicon carbide",

author = "Lauren Nuckols and Crespillo, {Miguel L.} and Yang Yang and Ju Li and Eva Zarkadoula and Yanwen Zhang and Weber, {William J.}",

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language = "English",

volume = "15",

journal = "Materialia",

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T1 - Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC

AU - Nuckols, Lauren

AU - Crespillo, Miguel L.

AU - Yang, Yang

AU - Li, Ju

AU - Zarkadoula, Eva

AU - Zhang, Yanwen

AU - Weber, William J.

PY - 2021/3

Y1 - 2021/3

N2 - The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. The more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.

AB - The coincidence of electronic and damage energy dissipation from energetic ions to an atomic lattice can significantly affect damage production along the ion trajectory due to spatial overlap of inelastic and elastic processes. Damage production and disordering in single crystal 3C-SiC from 5 MeV Si and 10 MeV Au ions is investigated using ion-channeling experiments. While defects are created by damage energy dissipation via elastic scattering, electronic energy dissipation via electron-phonon coupling decreases defect survival along the ion trajectory for Si ions. The more energetic recoil spectrum for 10 MeV Au ions leads to weaker spatial coupling of electronic and damage energy dissipation processes, and damage production is only weakly affected.

KW - Defects

KW - Ion irradiation

KW - Ionization

KW - Irradiation effect

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=85100424138&partnerID=8YFLogxK

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DO - 10.1016/j.mtla.2021.101023

M3 - Article

AN - SCOPUS:85100424138

SN - 2589-1529

VL - 15

JO - Materialia

JF - Materialia

M1 - 101023

ER -

Effects of recoil spectra and electronic energy dissipation on defect survival in 3C-SiC

Abstract

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Keywords

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