Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo; L. Liu; F. Ren; H. Y. Kim; J. Kim; S. J. Pearton; O. Laboutin; Yu Cao; J. W. Johnson; I. I. Kravchenko

doi:10.1116/1.3644480

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

C. F. Lo, L. Liu, F. Ren, H. Y. Kim, J. Kim, S. J. Pearton, O. Laboutin, Yu Cao, J. W. Johnson, I. I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 10¹¹ to 2 × 10¹⁵ cm^-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 10¹⁵ cm^-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 10¹¹ to 2 × 10¹⁵ cm^-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

Original language	English
Article number	061201
Journal	Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3644480
State	Published - Nov 2011

Funding

The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt and by HDTRA (Don Silversmith) under U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

Funders	Funder number
AFOSR MURI
Gregg Jessen and Kitt Reinhardt
HDTRA
Office of Basic Energy Sciences
U.S. DoD	1-11-1-0020
U.S. Department of Energy
Oak Ridge National Laboratory
University of Florida

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Lo, C. F., Liu, L., Ren, F., Kim, H. Y., Kim, J., Pearton, S. J., Laboutin, O., Cao, Y., Johnson, J. W., & Kravchenko, I. I. (2011). Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 29(6), Article 061201. https://doi.org/10.1116/1.3644480

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title = "Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors",

abstract = "The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.",

author = "Lo, {C. F.} and L. Liu and F. Ren and Kim, {H. Y.} and J. Kim and Pearton, {S. J.} and O. Laboutin and Yu Cao and Johnson, {J. W.} and Kravchenko, {I. I.}",

year = "2011",

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AU - Lo, C. F.

AU - Liu, L.

AU - Ren, F.

AU - Kim, H. Y.

AU - Kim, J.

AU - Pearton, S. J.

AU - Laboutin, O.

AU - Cao, Yu

AU - Johnson, J. W.

AU - Kravchenko, I. I.

PY - 2011/11

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N2 - The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

AB - The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.

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Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

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