Abstract
The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 × 1011 to 2 × 1015 cm-2. The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 × 1015 cm-2, both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 × 1011 to 2 × 1015 cm-2 exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present.
Original language | English |
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Article number | 061201 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 29 |
Issue number | 6 |
DOIs | |
State | Published - Nov 2011 |
Funding
The work performed at UF is supported by an AFOSR MURI monitored by Gregg Jessen and Kitt Reinhardt and by HDTRA (Don Silversmith) under U.S. DOD HDTRA Grant No. 1-11-1-0020. A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.
Funders | Funder number |
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AFOSR MURI | |
Gregg Jessen and Kitt Reinhardt | |
HDTRA | |
Office of Basic Energy Sciences | |
U.S. DoD | 1-11-1-0020 |
U.S. Department of Energy | |
Oak Ridge National Laboratory | |
University of Florida |