Effects of process parameters on the microstructure and conductive properties of LaNiO3 thin films

Ziyang Zhang; Jie Xing; Bin He; Jian Cao; Yanting Duan; Zhiyuan Zheng; Zili Zhang

Effects of process parameters on the microstructure and conductive properties of LaNiO₃ thin films

Ziyang Zhang, Jie Xing, Bin He, Jian Cao, Yanting Duan, Zhiyuan Zheng, Zili Zhang

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Conductive films of perovskite LaNiO₃ (LNO) were grown on LaAlO₃ (LAO) and silica using radio frequency sputtering. Effects of process parameters such as annealing condition, deposition atmosphere, deposition temperature and sputtering time on the microstructure and conductive properties were investigated. Experimental analysis showed the microstructure and conductive properties of films were improved after annealing. A mixture of O₂ and Ar with ratio of 1:6 was the optimal atmosphere. It was found that the temperature to achieve minimum resistivity was 200 °C when LNO film was deposited on LAO substrate. A semiconductive property was found when sputtering time decreased down to 5 minutes. LNO films with resistivity of 3.9×10^-4 Ω·cm was fabricated, which provided optimum electrodes for the subsequent epitaxial growth of ferroelectric thin films.

Original language	English
Pages (from-to)	201-206
Number of pages	6
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	7
Issue number	3-4
State	Published - 2013
Externally published	Yes

Keywords

Conductive properties
Microstructure

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Cite this

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title = "Effects of process parameters on the microstructure and conductive properties of LaNiO3 thin films",

abstract = "Conductive films of perovskite LaNiO3 (LNO) were grown on LaAlO3 (LAO) and silica using radio frequency sputtering. Effects of process parameters such as annealing condition, deposition atmosphere, deposition temperature and sputtering time on the microstructure and conductive properties were investigated. Experimental analysis showed the microstructure and conductive properties of films were improved after annealing. A mixture of O2 and Ar with ratio of 1:6 was the optimal atmosphere. It was found that the temperature to achieve minimum resistivity was 200 °C when LNO film was deposited on LAO substrate. A semiconductive property was found when sputtering time decreased down to 5 minutes. LNO films with resistivity of 3.9×10-4 Ω·cm was fabricated, which provided optimum electrodes for the subsequent epitaxial growth of ferroelectric thin films.",

keywords = "Conductive properties, Microstructure",

author = "Ziyang Zhang and Jie Xing and Bin He and Jian Cao and Yanting Duan and Zhiyuan Zheng and Zili Zhang",

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pages = "201--206",

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TY - JOUR

T1 - Effects of process parameters on the microstructure and conductive properties of LaNiO3 thin films

AU - Zhang, Ziyang

AU - Xing, Jie

AU - He, Bin

AU - Cao, Jian

AU - Duan, Yanting

AU - Zheng, Zhiyuan

AU - Zhang, Zili

PY - 2013

Y1 - 2013

N2 - Conductive films of perovskite LaNiO3 (LNO) were grown on LaAlO3 (LAO) and silica using radio frequency sputtering. Effects of process parameters such as annealing condition, deposition atmosphere, deposition temperature and sputtering time on the microstructure and conductive properties were investigated. Experimental analysis showed the microstructure and conductive properties of films were improved after annealing. A mixture of O2 and Ar with ratio of 1:6 was the optimal atmosphere. It was found that the temperature to achieve minimum resistivity was 200 °C when LNO film was deposited on LAO substrate. A semiconductive property was found when sputtering time decreased down to 5 minutes. LNO films with resistivity of 3.9×10-4 Ω·cm was fabricated, which provided optimum electrodes for the subsequent epitaxial growth of ferroelectric thin films.

AB - Conductive films of perovskite LaNiO3 (LNO) were grown on LaAlO3 (LAO) and silica using radio frequency sputtering. Effects of process parameters such as annealing condition, deposition atmosphere, deposition temperature and sputtering time on the microstructure and conductive properties were investigated. Experimental analysis showed the microstructure and conductive properties of films were improved after annealing. A mixture of O2 and Ar with ratio of 1:6 was the optimal atmosphere. It was found that the temperature to achieve minimum resistivity was 200 °C when LNO film was deposited on LAO substrate. A semiconductive property was found when sputtering time decreased down to 5 minutes. LNO films with resistivity of 3.9×10-4 Ω·cm was fabricated, which provided optimum electrodes for the subsequent epitaxial growth of ferroelectric thin films.

KW - Conductive properties

KW - Microstructure

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M3 - Article

AN - SCOPUS:84878748387

SN - 1842-6573

VL - 7

SP - 201

EP - 206

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 3-4

ER -

Effects of process parameters on the microstructure and conductive properties of LaNiO₃ thin films

Abstract

Keywords

UN SDGs

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