Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs

Guo Xing Duan; Jordan A. Hachtel; En Xia Zhang; Cher Xuan Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Robert A. Reed; Jerome Mitard; Dimitri Linten; Liesbeth Witters; Nadine Collaert; Anda Mocuta; Aaron Voon Yew Thean; Matthew F. Chisholm; Sokrates T. Pantelides

doi:10.1109/TDMR.2016.2611533

Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs

Guo Xing Duan, Jordan A. Hachtel, En Xia Zhang, Cher Xuan Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Robert A. Reed, Jerome Mitard, Dimitri Linten, Liesbeth Witters, Nadine Collaert, Anda Mocuta, Aaron Voon Yew Thean, Matthew F. Chisholm, Sokrates T. Pantelides

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO₂/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (SVD) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.

Original language	English
Article number	2611533
Pages (from-to)	541-548
Number of pages	8
Journal	IEEE Transactions on Device and Materials Reliability
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/TDMR.2016.2611533
State	Published - Dec 2016
Externally published	Yes

Funding

This work was supported in part by the Air Force Office of Scientific Research and Air Force Research Laboratory through the HiREV Program, in part by the Defense Threat Reduction Agency through its Fundamental Research Program, in part by the National Science Foundation under Grant ECCS-1508898, in part by the Department of Energy under Grant DE-FG02-09ER46554, and in part by the U.S. Department of Energy Office of Science, Basic Energy Sciences, Materials Science, and Engineering Directorate.

Funders	Funder number
Air Force Office of Scientific Research and Air Force Research Laboratory
Materials Science, and Engineering Directorate
National Science Foundation	ECCS-1508898
U.S. Department of Energy	DE-FG02-09ER46554
Defense Threat Reduction Agency
Basic Energy Sciences

Keywords

1/f noise
Defect energy distribution
HfO
NBTI
Oxygen vacancy defects
Relaxation-assisted transitions
SiGe

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10.1109/TDMR.2016.2611533

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Duan, G. X., Hachtel, J. A., Zhang, E. X., Zhang, C. X., Fleetwood, D. M., Schrimpf, R. D., Reed, R. A., Mitard, J., Linten, D., Witters, L., Collaert, N., Mocuta, A., Thean, A. V. Y., Chisholm, M. F., & Pantelides, S. T. (2016). Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs. IEEE Transactions on Device and Materials Reliability, 16(4), 541-548. Article 2611533. https://doi.org/10.1109/TDMR.2016.2611533

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title = "Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs",

abstract = "We have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (SVD) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.",

keywords = "1/f noise, Defect energy distribution, HfO, NBTI, Oxygen vacancy defects, Relaxation-assisted transitions, SiGe",

author = "Duan, {Guo Xing} and Hachtel, {Jordan A.} and Zhang, {En Xia} and Zhang, {Cher Xuan} and Fleetwood, {Daniel M.} and Schrimpf, {Ronald D.} and Reed, {Robert A.} and Jerome Mitard and Dimitri Linten and Liesbeth Witters and Nadine Collaert and Anda Mocuta and Thean, {Aaron Voon Yew} and Chisholm, {Matthew F.} and Pantelides, {Sokrates T.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

year = "2016",

month = dec,

doi = "10.1109/TDMR.2016.2611533",

language = "English",

volume = "16",

pages = "541--548",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers",

number = "4",

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Duan, GX, Hachtel, JA, Zhang, EX, Zhang, CX, Fleetwood, DM, Schrimpf, RD, Reed, RA, Mitard, J, Linten, D, Witters, L, Collaert, N, Mocuta, A, Thean, AVY, Chisholm, MF & Pantelides, ST 2016, 'Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs', IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, 2611533, pp. 541-548. https://doi.org/10.1109/TDMR.2016.2611533

TY - JOUR

T1 - Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs

AU - Duan, Guo Xing

AU - Hachtel, Jordan A.

AU - Zhang, En Xia

AU - Zhang, Cher Xuan

AU - Fleetwood, Daniel M.

AU - Schrimpf, Ronald D.

AU - Reed, Robert A.

AU - Mitard, Jerome

AU - Linten, Dimitri

AU - Witters, Liesbeth

AU - Collaert, Nadine

AU - Mocuta, Anda

AU - Thean, Aaron Voon Yew

AU - Chisholm, Matthew F.

AU - Pantelides, Sokrates T.

PY - 2016/12

Y1 - 2016/12

N2 - We have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (SVD) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.

AB - We have measured the low-frequency 1/f noise of Si0.55Ge0.45 pMOSFETs with a Si capping layer and SiO2/HfO2/TiN gate stack as a function of frequency, gate voltage, and temperature (100-440 K). The magnitude of the excess drain voltage noise power spectral density (SVD) is unaffected by negative-bias-temperature stress (NBTS) for temperatures below ~250 K, but increases significantly at higher temperatures. The noise is described well by the Dutta-Horn model before and after NBTS. The noise at higher measuring temperatures is attributed primarily to oxygen-vacancy and hydrogen-related defects in the SiO2 and HfO2 layers. At lower measuring temperatures, the noise also appears to be affected strongly by hydrogen-dopant interactions in the SiGe layer of the device.

KW - 1/f noise

KW - Defect energy distribution

KW - HfO

KW - NBTI

KW - Oxygen vacancy defects

KW - Relaxation-assisted transitions

KW - SiGe

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U2 - 10.1109/TDMR.2016.2611533

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SN - 1530-4388

VL - 16

SP - 541

EP - 548

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 4

M1 - 2611533

ER -

Effects of negative-bias-temperature-instability on low-frequency noise in SiGe pMOSFETs

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