Abstract
The structural and optical properties of GaSbN single quantum wells grown on GaSb substrates by solid source molecular beam epitaxy have been investigated for N concentrations up to 1.5%. The presence of well-resolved and pronounced Pendellosung fringes, dynamical diffraction rods seen in the corresponding reciprocal space map, and triple-axis x-ray full width at half maximum of 10-11 arcsec of the substrate and epilayer peak indicates epilayers of excellent quality with smooth interfaces. Low-temperature photoluminescence (PL) exhibited sharp and discrete N-related PL line features below the GaSb band edge. Their dependence on N concentration as well as measurement temperature and excitation intensity of the PL strongly suggests that these lines correspond to highly localized N pair/cluster states. No significant effect of in situ annealing in Sb ambient on the PL features was observed, while ex situ annealing in N ambient led to the annihilation of these features.
| Original language | English |
|---|---|
| Article number | 113508 |
| Journal | Journal of Applied Physics |
| Volume | 101 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2007 |
Funding
This work is supported by Army Research Office (Contract No. W911NF-06–1-0396). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Division of Scientific User Facilities, U.S. Department of Energy.