Effects of MeV implanted boron on the optical properties of silica

R. H. Magruder; R. A. Weeks; R. A. Zuhr; D. K. Hensley

doi:10.1016/S0022-3093(97)00399-2

Effects of MeV implanted boron on the optical properties of silica

R. H. Magruder, R. A. Weeks, R. A. Zuhr, D. K. Hensley

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Silica was implanted with B ions at 4 MeV with nominal doses of 0.1, 0.3, and 1.0×10¹⁶ ions/cm². The optical absorption was measured from 2.7 to 6.2 eV. Bands at 5.85 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose. However the magnitude of the increase in absorption is not linear with dose with the lowest dose the most efficient on a per ion basis in creating defects which produce these two bands. The 1.0×10¹⁶ sample was exposed to 5-eV KrF excimer irradiation with a fluence of 150 mJ/cm² per pulse for pulse totals of 1.5, 15 and 30 J/cm². Bleaching of the 5- and 5.85-eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.85 eV.

Original language	English
Pages (from-to)	243-249
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	222
DOIs	https://doi.org/10.1016/S0022-3093(97)00399-2
State	Published - Dec 2 1997
Externally published	Yes
Event	Proceedings of the 1997 14th University Conference on Glass Science - Bethlehem, PA, USA Duration: Jun 17 1997 → Jun 20 1997

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title = "Effects of MeV implanted boron on the optical properties of silica",

abstract = "Silica was implanted with B ions at 4 MeV with nominal doses of 0.1, 0.3, and 1.0×1016 ions/cm2. The optical absorption was measured from 2.7 to 6.2 eV. Bands at 5.85 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose. However the magnitude of the increase in absorption is not linear with dose with the lowest dose the most efficient on a per ion basis in creating defects which produce these two bands. The 1.0×1016 sample was exposed to 5-eV KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. Bleaching of the 5- and 5.85-eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.85 eV.",

author = "Magruder, {R. H.} and Weeks, {R. A.} and Zuhr, {R. A.} and Hensley, {D. K.}",

year = "1997",

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doi = "10.1016/S0022-3093(97)00399-2",

language = "English",

volume = "222",

pages = "243--249",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

note = "Proceedings of the 1997 14th University Conference on Glass Science ; Conference date: 17-06-1997 Through 20-06-1997",

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TY - JOUR

T1 - Effects of MeV implanted boron on the optical properties of silica

AU - Magruder, R. H.

AU - Weeks, R. A.

AU - Zuhr, R. A.

AU - Hensley, D. K.

PY - 1997/12/2

Y1 - 1997/12/2

N2 - Silica was implanted with B ions at 4 MeV with nominal doses of 0.1, 0.3, and 1.0×1016 ions/cm2. The optical absorption was measured from 2.7 to 6.2 eV. Bands at 5.85 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose. However the magnitude of the increase in absorption is not linear with dose with the lowest dose the most efficient on a per ion basis in creating defects which produce these two bands. The 1.0×1016 sample was exposed to 5-eV KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. Bleaching of the 5- and 5.85-eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.85 eV.

AB - Silica was implanted with B ions at 4 MeV with nominal doses of 0.1, 0.3, and 1.0×1016 ions/cm2. The optical absorption was measured from 2.7 to 6.2 eV. Bands at 5.85 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose. However the magnitude of the increase in absorption is not linear with dose with the lowest dose the most efficient on a per ion basis in creating defects which produce these two bands. The 1.0×1016 sample was exposed to 5-eV KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. Bleaching of the 5- and 5.85-eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.85 eV.

UR - http://www.scopus.com/inward/record.url?scp=0031550046&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(97)00399-2

DO - 10.1016/S0022-3093(97)00399-2

M3 - Conference article

AN - SCOPUS:0031550046

SN - 0022-3093

VL - 222

SP - 243

EP - 249

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - Proceedings of the 1997 14th University Conference on Glass Science

Y2 - 17 June 1997 through 20 June 1997

ER -

Effects of MeV implanted boron on the optical properties of silica

Abstract

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