Abstract
Silica was implanted with B ions at 4 MeV with nominal doses of 0.1, 0.3, and 1.0 × 1016 ions/cm2. The optical absorption was measured from 2.7 to 6.2 eV. Bands at 5.85 and 5 eV are observed in the absorption spectra. The magnitude of the absorption increases with increasing dose. However the magnitude of the increase in absorption is not linear with dose with the lowest dose the most efficient on a per ion basis in creating defects which produce these two bands. The 1.0 × 1016 sample was exposed to 5-eV KrF excimer irradiation with a fluence of 150 mJ/cm2 per pulse for pulse totals of 1.5, 15 and 30 J/cm2. Bleaching of the 5- and 5.85-eV bands is observed and is attributed to the bleaching of defects at 5, 5.5 and 5.85 eV.
Original language | English |
---|---|
Pages (from-to) | 243-249 |
Number of pages | 7 |
Journal | Journal of Non-Crystalline Solids |
Volume | 222 |
DOIs | |
State | Published - Dec 11 1997 |
Funding
The authorsa cknowledgteh e supporto f The ResearchC orporationa nd Oak Ridge National Laboratorym, anagedb y Lockheed Martin Energy ResearchC orp. for the US Departmenotf Energy under contract number DE-AC05-96OR22464.