Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

Guo Zhen Liu; Can Wang; Chun Chang Wang; Jie Qiu; Meng He; Jie Xing; Kui Juan Jin; Hui Bin Lu; Guo Zhen Yang

doi:10.1063/1.2900989

Effects of interfacial polarization on the dielectric properties of BiFeO₃ thin film capacitors

Guo Zhen Liu, Can Wang, Chun Chang Wang, Jie Qiu, Meng He, Jie Xing, Kui Juan Jin, Hui Bin Lu, Guo Zhen Yang

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

Epitaxial BiFe O3 La0.7 Sr0.3 Mn O3 (BFO/LSMO) heterostructures were grown on SrTi O3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (≤1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors.

Original language	English
Article number	122903
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2900989
State	Published - 2008
Externally published	Yes

Funding

The authors acknowledge the financial support from National Natural Science Foundation of China and National Basic Research Program of China.

Funders	Funder number
National Natural Science Foundation of China
National Basic Research Program of China (973 Program)

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abstract = "Epitaxial BiFe O3 La0.7 Sr0.3 Mn O3 (BFO/LSMO) heterostructures were grown on SrTi O3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (≤1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors.",

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T1 - Effects of interfacial polarization on the dielectric properties of BiFeO3 thin film capacitors

AU - Liu, Guo Zhen

AU - Wang, Can

AU - Wang, Chun Chang

AU - Qiu, Jie

AU - He, Meng

AU - Xing, Jie

AU - Jin, Kui Juan

AU - Lu, Hui Bin

AU - Yang, Guo Zhen

PY - 2008

Y1 - 2008

N2 - Epitaxial BiFe O3 La0.7 Sr0.3 Mn O3 (BFO/LSMO) heterostructures were grown on SrTi O3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (≤1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors.

AB - Epitaxial BiFe O3 La0.7 Sr0.3 Mn O3 (BFO/LSMO) heterostructures were grown on SrTi O3 (001) substrates. Dielectric properties of the BFO thin films were investigated in an In/BFO/LSMO capacitor configuration. The capacitance of the capacitor shows strong dependences on measuring frequency and bias voltage especially in low frequency region (≤1 MHz). By means of complex impedance analysis, it is found that the interfacial polarization caused by space charges in the film/electrode interfaces plays an important role in the dielectric behavior of the capacitor. Our results indicate that the influences of film/electrode interfaces might not be neglected on the dielectric properties of the BFO thin film capacitors.

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Effects of interfacial polarization on the dielectric properties of BiFeO₃ thin film capacitors

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