Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe

Michael A. McGuire; Abds Sami Malik; Francis J. DiSalvo

doi:10.1016/j.jallcom.2007.05.072

Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe

Michael A. McGuire, Abds Sami Malik, Francis J. DiSalvo

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Changes in the thermoelectric properties of nominally undoped stoichiometric PbTe caused by high-pressure high-temperature (HPHT) treatment near 6.5 GPa and 900 °C are reported. Comparison of the electrical resistivity, thermopower, and thermal conductivity suggest that the carrier concentration and lattice defect density are decreased by HPHT treatment. Annealing the treated samples at intermediate temperatures (500-600 °C) reversed the changes. These observations are consistent with Pb vacancies being "squeezed out" by the applied pressure, and subsequently reintroduced by annealing.

Original language	English
Pages (from-to)	8-12
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	460
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.05.072
State	Published - Jul 28 2008
Externally published	Yes

Funding

This work was funded by Cornell University. We thank John W. Lucek at Diamond Innovations for helpful discussions regarding the HPHT work, and John Hunt for assistance with the electron microprobe facility, which is part of the Cornell Center for Materials Research (MRSEC Grant DMR-0520404).

Funders	Funder number
Cornell University

Keywords

Electrical transport
Heat conduction
Point defects
Semiconductors

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10.1016/j.jallcom.2007.05.072

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@article{b8b880be23ff44aeacc8163a91efe6de,

title = "Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe",

abstract = "Changes in the thermoelectric properties of nominally undoped stoichiometric PbTe caused by high-pressure high-temperature (HPHT) treatment near 6.5 GPa and 900 °C are reported. Comparison of the electrical resistivity, thermopower, and thermal conductivity suggest that the carrier concentration and lattice defect density are decreased by HPHT treatment. Annealing the treated samples at intermediate temperatures (500-600 °C) reversed the changes. These observations are consistent with Pb vacancies being {"}squeezed out{"} by the applied pressure, and subsequently reintroduced by annealing.",

keywords = "Electrical transport, Heat conduction, Point defects, Semiconductors",

author = "McGuire, {Michael A.} and Malik, {Abds Sami} and DiSalvo, {Francis J.}",

year = "2008",

month = jul,

day = "28",

doi = "10.1016/j.jallcom.2007.05.072",

language = "English",

volume = "460",

pages = "8--12",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe

AU - McGuire, Michael A.

AU - Malik, Abds Sami

AU - DiSalvo, Francis J.

PY - 2008/7/28

Y1 - 2008/7/28

N2 - Changes in the thermoelectric properties of nominally undoped stoichiometric PbTe caused by high-pressure high-temperature (HPHT) treatment near 6.5 GPa and 900 °C are reported. Comparison of the electrical resistivity, thermopower, and thermal conductivity suggest that the carrier concentration and lattice defect density are decreased by HPHT treatment. Annealing the treated samples at intermediate temperatures (500-600 °C) reversed the changes. These observations are consistent with Pb vacancies being "squeezed out" by the applied pressure, and subsequently reintroduced by annealing.

AB - Changes in the thermoelectric properties of nominally undoped stoichiometric PbTe caused by high-pressure high-temperature (HPHT) treatment near 6.5 GPa and 900 °C are reported. Comparison of the electrical resistivity, thermopower, and thermal conductivity suggest that the carrier concentration and lattice defect density are decreased by HPHT treatment. Annealing the treated samples at intermediate temperatures (500-600 °C) reversed the changes. These observations are consistent with Pb vacancies being "squeezed out" by the applied pressure, and subsequently reintroduced by annealing.

KW - Electrical transport

KW - Heat conduction

KW - Point defects

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=44449145902&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2007.05.072

DO - 10.1016/j.jallcom.2007.05.072

M3 - Article

AN - SCOPUS:44449145902

SN - 0925-8388

VL - 460

SP - 8

EP - 12

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe

Abstract

Funding

Keywords

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