Abstract
Effects of He implantation on radiation induced segregation (RIS) in Cu-Au and Ni-Si alloys were investigated using in situ Rutherford backscattering spectrometry during simultaneous irradiation with 1.5-MeV He and low-energy (100 or 400-keV) He ions at elevated temperatures. RIS during single He ion irradiation, and the effects of pre-implantation with low-energy He ions, were also studied. RIS near the specimen surface, which was pronounced during 1.5-MeV He single-ion irradiation, was strongly reduced under low-energy He single-ion irradiation, and during simultaneous irradiation with 1.5-MeV He and low-energy He ions. A similar RIS reduction was also observed in the specimens pre-implanted with low-energy He ions. The experimental results indicate that the accumulated He atoms cause the formation of small bubbles, which provide additional recombination sites for freely migrating defects.
| Original language | English |
|---|---|
| Pages (from-to) | 321-325 |
| Number of pages | 5 |
| Journal | Journal of Nuclear Materials |
| Volume | 271-272 |
| DOIs | |
| State | Published - May 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1997 8th International Conference on Fusion Reactor Materials (ICFRM-8), Part C - Sendai, Jpn Duration: Oct 26 1997 → Oct 31 1997 |
Funding
The authors are grateful to B. Kestel for the expert assistance with specimen preparation. This work was supported by the US Department of Energy, BES-Materials Science under Contract No. W-31-109-ENG-38.