TY - GEN
T1 - Effects of growth temperature on epitaxial thin films of vanadium dioxide grown by pulsed laser deposition
AU - Nag, J.
AU - Haglund, R. F.
AU - Payzant, E. A.
PY - 2011
Y1 - 2011
N2 - Stoichiometric vanadium dioxide in all of its bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by structural change, induced by various physical and chemical stimuli such as temperature, ultrashort light pulses, electric field, doping or strain. In these applications, the optical qualities of the films are of paramount importance, but are often highly variable depending on fabrication procedure. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving room temperature growth followed by annealing and direct high temperature growth. Strain at the interface of the substrate and the film due to growth at different temperatures leads to significantg differences in morphologies and phase transition characteristics. We present a comparative study of the morphologies and switching characteristics of the two films and conclude that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance. Our observation is supported by theoretical and experimental studies of epitaxial growth of semiconductors.
AB - Stoichiometric vanadium dioxide in all of its bulk, thin film and nanostructured forms exhibits an insulator-to-metal transition (IMT) accompanied by structural change, induced by various physical and chemical stimuli such as temperature, ultrashort light pulses, electric field, doping or strain. In these applications, the optical qualities of the films are of paramount importance, but are often highly variable depending on fabrication procedure. We have grown epitaxial films of vanadium dioxide on c-plane (0001) of sapphire using two different procedures involving room temperature growth followed by annealing and direct high temperature growth. Strain at the interface of the substrate and the film due to growth at different temperatures leads to significantg differences in morphologies and phase transition characteristics. We present a comparative study of the morphologies and switching characteristics of the two films and conclude that contrary to conventional wisdom, the room-temperature grown films have smoother, more continuous morphologies and better switching performance. Our observation is supported by theoretical and experimental studies of epitaxial growth of semiconductors.
UR - http://www.scopus.com/inward/record.url?scp=80052104131&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:80052104131
SN - 9781557529107
T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011
BT - 2011 Conference on Lasers and Electro-Optics
T2 - 2011 Conference on Lasers and Electro-Optics, CLEO 2011
Y2 - 1 May 2011 through 6 May 2011
ER -