Abstract
Some of the effects of ArF excimer irradiation on the optical bands produced by single energy (4 MeV) and multi energy (highest energy 4 MeV) Ge implantations in silica (Type III) have been determined. Ge ions were implanted at 4 MeV with nominal doses of 1.25, 2.5 and 5.0×1015 ions/cm2. A second series of samples was made using implant energies ranging from 4 to 0.7 MeV. The doses at each energy were varied to maintain an approximate constant implant species concentration with the total number of ions implanted being 10×1015 and 5×1015 cm-2 for concentrations of 0.042 and 0.021 at.%, respectively. The optical absorption was measured from 2.8 to 6.5 eV. The absorption of samples was then measured after 6.4 eV ArF excimer radiation with a fluence of 44 mJ/cm2 per pulse for pulse totals of 3, 11 and 31. We fit the observed spectra for the as-implanted samples and the samples after each ArF exposure to the minimum number of bands attributed to intrinsic states in SiO2 required to fit the data within ±2%. The magnitude and response of these absorption bands to the ArF irradiation was a function of dose and implant conditions.
Original language | English |
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Pages (from-to) | 169-176 |
Number of pages | 8 |
Journal | Journal of Non-Crystalline Solids |
Volume | 280 |
Issue number | 1-3 |
DOIs | |
State | Published - Feb 2001 |
Funding
The authors acknowledge the support of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy under contract number DE-AC05-00OR22725.