Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

M. J. Paulus; E. T. Koenig; B. Jogai; C. A. Bozada; C. I. Huang; C. E. Stutz; K. R. Evans

doi:10.1016/0749-6036(90)90126-R

Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

M. J. Paulus, E. T. Koenig, B. Jogai, C. A. Bozada, C. I. Huang, C. E. Stutz, K. R. Evans

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An inflection is observed before the current peak in the current-voltage (I-V) curves of AlAs/GaAs superlattice resonant tunneling diodes with 500 Å 2×10¹⁶ cm^-3 n-GaAs spacer layers between the n⁺ contact layers and the AlAs barriers. The inflection cannot be conclusively accounted for if the established model of end-to-end tunneling between the n⁺ contacts is applied. Evidence of an electron accumulation layer adjacent to the first upstream AlAs barrier suggests electron transport through the structure may be a two-step process and the I-V singularity a result thereof. The phenomenon is investigated by calculating conduction band profiles of the structures using a self-consistent solution to the time-independent Schrödinger and Poisson equations.

Original language	English
Pages (from-to)	135-137
Number of pages	3
Journal	Superlattices and Microstructures
Volume	7
Issue number	2
DOIs	https://doi.org/10.1016/0749-6036(90)90126-R
State	Published - 1990
Externally published	Yes

Funding

Acknowledgement-The authors gratefully acknowledge the technical support of R. Bacon, J, Ehret, C. Isbill, B. Johnson, D. Mays, R. Scherer, E. Taylor, and G. Wilder. One of the authors (MIP) is now with the Georgia Tech Microelectronics Research Center, Atlanta, GA. Two of the authors (BJ and KRE) are with Universal Energy Systems, Dayton, OH, and are supported by Air Force Contract No. F33615-90-C-1420. This work has been supported in part by the Air Force Office of Scientific Research.

Funders	Funder number
Air Force Office of Scientific Research
Air Force Institute of Technology

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10.1016/0749-6036(90)90126-R

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title = "Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode",

abstract = "An inflection is observed before the current peak in the current-voltage (I-V) curves of AlAs/GaAs superlattice resonant tunneling diodes with 500 {\AA} 2×1016 cm-3 n-GaAs spacer layers between the n+ contact layers and the AlAs barriers. The inflection cannot be conclusively accounted for if the established model of end-to-end tunneling between the n+ contacts is applied. Evidence of an electron accumulation layer adjacent to the first upstream AlAs barrier suggests electron transport through the structure may be a two-step process and the I-V singularity a result thereof. The phenomenon is investigated by calculating conduction band profiles of the structures using a self-consistent solution to the time-independent Schr{\"o}dinger and Poisson equations.",

author = "Paulus, {M. J.} and Koenig, {E. T.} and B. Jogai and Bozada, {C. A.} and Huang, {C. I.} and Stutz, {C. E.} and Evans, {K. R.}",

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doi = "10.1016/0749-6036(90)90126-R",

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T1 - Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

AU - Paulus, M. J.

AU - Koenig, E. T.

AU - Jogai, B.

AU - Bozada, C. A.

AU - Huang, C. I.

AU - Stutz, C. E.

AU - Evans, K. R.

PY - 1990

Y1 - 1990

N2 - An inflection is observed before the current peak in the current-voltage (I-V) curves of AlAs/GaAs superlattice resonant tunneling diodes with 500 Å 2×1016 cm-3 n-GaAs spacer layers between the n+ contact layers and the AlAs barriers. The inflection cannot be conclusively accounted for if the established model of end-to-end tunneling between the n+ contacts is applied. Evidence of an electron accumulation layer adjacent to the first upstream AlAs barrier suggests electron transport through the structure may be a two-step process and the I-V singularity a result thereof. The phenomenon is investigated by calculating conduction band profiles of the structures using a self-consistent solution to the time-independent Schrödinger and Poisson equations.

AB - An inflection is observed before the current peak in the current-voltage (I-V) curves of AlAs/GaAs superlattice resonant tunneling diodes with 500 Å 2×1016 cm-3 n-GaAs spacer layers between the n+ contact layers and the AlAs barriers. The inflection cannot be conclusively accounted for if the established model of end-to-end tunneling between the n+ contacts is applied. Evidence of an electron accumulation layer adjacent to the first upstream AlAs barrier suggests electron transport through the structure may be a two-step process and the I-V singularity a result thereof. The phenomenon is investigated by calculating conduction band profiles of the structures using a self-consistent solution to the time-independent Schrödinger and Poisson equations.

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U2 - 10.1016/0749-6036(90)90126-R

DO - 10.1016/0749-6036(90)90126-R

M3 - Article

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SN - 0749-6036

VL - 7

SP - 135

EP - 137

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Effects of a low-doped spacer layer in the emitter of a resonant tunneling diode

Abstract

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