Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures

Milinda Wasala; Jie Zhang; Sujoy Ghosh; Baleeswaraiah Muchharla; Rachel Malecek; Dipanjan Mazumdar; Hassana Samassekou; Moses Gaither-Ganim; Andrew Morrison; Nestor Perera Lopez; Victor Carozo; Zhong Lin; Mauricio Terrones; Saikat Talapatra

doi:10.1557/jmr.2015.364

Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures

Milinda Wasala, Jie Zhang, Sujoy Ghosh, Baleeswaraiah Muchharla, Rachel Malecek, Dipanjan Mazumdar, Hassana Samassekou, Moses Gaither-Ganim, Andrew Morrison, Nestor Perera Lopez, Victor Carozo, Zhong Lin, Mauricio Terrones, Saikat Talapatra

Nanofabrication Research Laboratory

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS₂ on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (I_ph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that I_ph obtained from MoS₂ layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS₂ layers with the 30 nm BN under layer. We also found super linear dependence of I_ph on P (I_ph ∝ P^γ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS₂ on BN, which could be useful for developing a variety of optoelectronic applications with MoS₂ or other 2D transition metal dichalcogenide heterostructures.

Original language	English
Pages (from-to)	893-899
Number of pages	7
Journal	Journal of Materials Research
Volume	31
Issue number	7
DOIs	https://doi.org/10.1557/jmr.2015.364
State	Published - Apr 14 2016

Funding

This work is supported by the U.S. Army Research Office through a MURI Grant No. W911NF-11-1-0362. The X-ray reflectivity experiment shown was carried out in the Frederick Seitz Materials Research Laboratory Central Research Facilities, University of Illinois. D.M. would like to acknowledge Dr. Mauro Sardela for his help with X-ray measurements.

Keywords

2D heterostructures
MoS
photocurrent

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10.1557/jmr.2015.364

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Wasala, M., Zhang, J., Ghosh, S., Muchharla, B., Malecek, R., Mazumdar, D., Samassekou, H., Gaither-Ganim, M., Morrison, A., Lopez, N. P., Carozo, V., Lin, Z., Terrones, M., & Talapatra, S. (2016). Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures. Journal of Materials Research, 31(7), 893-899. https://doi.org/10.1557/jmr.2015.364

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title = "Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures",

abstract = "Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.",

keywords = "2D heterostructures, MoS, photocurrent",

author = "Milinda Wasala and Jie Zhang and Sujoy Ghosh and Baleeswaraiah Muchharla and Rachel Malecek and Dipanjan Mazumdar and Hassana Samassekou and Moses Gaither-Ganim and Andrew Morrison and Lopez, {Nestor Perera} and Victor Carozo and Zhong Lin and Mauricio Terrones and Saikat Talapatra",

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doi = "10.1557/jmr.2015.364",

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Wasala, M, Zhang, J, Ghosh, S, Muchharla, B, Malecek, R, Mazumdar, D, Samassekou, H, Gaither-Ganim, M, Morrison, A, Lopez, NP, Carozo, V, Lin, Z, Terrones, M & Talapatra, S 2016, 'Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures', Journal of Materials Research, vol. 31, no. 7, pp. 893-899. https://doi.org/10.1557/jmr.2015.364

TY - JOUR

T1 - Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures

AU - Wasala, Milinda

AU - Zhang, Jie

AU - Ghosh, Sujoy

AU - Muchharla, Baleeswaraiah

AU - Malecek, Rachel

AU - Mazumdar, Dipanjan

AU - Samassekou, Hassana

AU - Gaither-Ganim, Moses

AU - Morrison, Andrew

AU - Lopez, Nestor Perera

AU - Carozo, Victor

AU - Lin, Zhong

AU - Terrones, Mauricio

AU - Talapatra, Saikat

PY - 2016/4/14

Y1 - 2016/4/14

N2 - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.

AB - Here we report on the photocurrent response of two-dimensional (2D) heterostructures of sputtered MoS2 on boron nitride (BN) deposited on (001)-oriented Si substrates. The steady state photocurrent (Iph) measurements used a continuous laser of λ = 658 nm (E = 1.88 eV) over a broad range of laser intensities, P (∼1 μW < P < 10 μW), and indicate that Iph obtained from MoS2 layers with the 80 nm BN under layer was ∼4 times higher than that obtained from MoS2 layers with the 30 nm BN under layer. We also found super linear dependence of Iph on P (Iph ∝ Pγ, with γ > 1) in both the samples. The responsivities obtained over the range of laser intensity studied were in the order of mA/W (∼12 and ∼2.7 mA/W with 80 nm BN and 30 nm BN under layers, respectively). These investigations provide crucial insight into the optical activity of MoS2 on BN, which could be useful for developing a variety of optoelectronic applications with MoS2 or other 2D transition metal dichalcogenide heterostructures.

KW - 2D heterostructures

KW - MoS

KW - photocurrent

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DO - 10.1557/jmr.2015.364

M3 - Article

AN - SCOPUS:84953338050

SN - 0884-2914

VL - 31

SP - 893

EP - 899

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 7

ER -

Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures

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