Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364)

M. Wasala; J. Zhang; S. Ghosh; B. Muchharla; R. Malecek; D. Mazumdar; H. Samassekou; M. Gaither-Ganim; A. Morrison; N. P. Lopez; V. Carozo; Z. Lin; M. Terrones; S. Talapatra

doi:10.1557/jmr.2016.129

Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364)

M. Wasala, J. Zhang, S. Ghosh, B. Muchharla, R. Malecek, D. Mazumdar, H. Samassekou, M. Gaither-Ganim, A. Morrison, N. P. Lopez, V. Carozo, Z. Lin, M. Terrones, S. Talapatra

Nanofabrication Research Laboratory

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	975
Number of pages	1
Journal	Journal of Materials Research
Volume	31
Issue number	7
DOIs	https://doi.org/10.1557/jmr.2016.129
State	Published - Apr 14 2016

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10.1557/jmr.2016.129

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Wasala, M., Zhang, J., Ghosh, S., Muchharla, B., Malecek, R., Mazumdar, D., Samassekou, H., Gaither-Ganim, M., Morrison, A., Lopez, N. P., Carozo, V., Lin, Z., Terrones, M., & Talapatra, S. (2016). Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364). Journal of Materials Research, 31(7), 975. https://doi.org/10.1557/jmr.2016.129

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author = "M. Wasala and J. Zhang and S. Ghosh and B. Muchharla and R. Malecek and D. Mazumdar and H. Samassekou and M. Gaither-Ganim and A. Morrison and Lopez, {N. P.} and V. Carozo and Z. Lin and M. Terrones and S. Talapatra",

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Wasala, M, Zhang, J, Ghosh, S, Muchharla, B, Malecek, R, Mazumdar, D, Samassekou, H, Gaither-Ganim, M, Morrison, A, Lopez, NP, Carozo, V, Lin, Z, Terrones, M & Talapatra, S 2016, 'Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364)', Journal of Materials Research, vol. 31, no. 7, pp. 975. https://doi.org/10.1557/jmr.2016.129

Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364). / Wasala, M.; Zhang, J.; Ghosh, S. et al.
In: Journal of Materials Research, Vol. 31, No. 7, 14.04.2016, p. 975.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364)

AU - Wasala, M.

AU - Zhang, J.

AU - Ghosh, S.

AU - Muchharla, B.

AU - Malecek, R.

AU - Mazumdar, D.

AU - Samassekou, H.

AU - Gaither-Ganim, M.

AU - Morrison, A.

AU - Lopez, N. P.

AU - Carozo, V.

AU - Lin, Z.

AU - Terrones, M.

AU - Talapatra, S.

PY - 2016/4/14

Y1 - 2016/4/14

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U2 - 10.1557/jmr.2016.129

DO - 10.1557/jmr.2016.129

M3 - Comment/debate

AN - SCOPUS:84968546977

SN - 0884-2914

VL - 31

SP - 975

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 7

ER -

Effect of underlying boron nitride thickness on photocurrent response in molybdenum disulfide - Boron nitride heterostructures - Erratum (Journal of Materials Research (2016) 31, 7, (893-899) DOI: 10.1557/jmr.2015.364)

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