Effect of tungsten crystallographic orientation on He-ion-induced surface morphology changes

C. M. Parish, H. Hijazi, H. M. Meyer, F. W. Meyer

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121 Scopus citations

Abstract

In order to study the early stages of nanofuzz growth in fusion-plasma-facing tungsten, mirror-polished high-purity tungsten was exposed to 80 eV helium at 1130 °C to a fluence of 4 × 1024 He m-2. The previously smooth surface shows morphology changes, and grains form one of four qualitatively different morphologies: smooth, wavy, pyramidal or terraced/wide waves. Combining high-resolution scanning electron microscopy (SEM) observations to determine the morphology of each grain with quantitative measurement of the grain's orientation via electron backscatter diffraction in SEM shows that the normal-direction crystallographic orientation of the underlying grain controls the growth morphology. Specifically, near-{001} || normal direction (ND) grains formed pyramids, near-{114} to {112} || ND grains formed wavy and stepped structures and near-{103} || ND grains remained smooth. Comparisons to control specimens indicate no changes to underlying bulk crystallographic texture, and possible explanations of the structure growth, particularly loop-punching, are discussed. Future developments to control tungsten texture via thermomechanical processing, ideally obtaining a sharp near-{103} || ND processing texture, may delay the formation of nanofuzz.

Original languageEnglish
Pages (from-to)173-181
Number of pages9
JournalActa Materialia
Volume62
Issue number1
DOIs
StatePublished - Jan 2014

Funding

This research was sponsored by the LDRD Program of Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the US Department of Energy. HH was appointed through the ORNL Postdoctoral Research Associates Program administered jointly by Oak Ridge Institute of Science and Education (ORISE), Oak Ridge Associated Universities (ORAU) and Oak Ridge National Laboratory (ORNL). Work performed in part via Oak Ridge National Laboratory’s Shared Research Equipment (ShaRE) User Program, which is sponsored by the Office of Basic Energy Sciences, US Department of Energy. Thanks to Dr. Lucille Giannuzzi, L.A. Giannuzzi & Associates LLC, for discussions regarding ion channeling. Thanks to Dr. Maxim Gussev, ORNL, for critiquing the manuscript.

FundersFunder number
Office of Basic Energy Sciences
US Department of Energy
Oak Ridge National Laboratory

    Keywords

    • Dislocation loop punching
    • Electron backscatter diffraction
    • Helium
    • Ion irradiation
    • Tungsten

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