Abstract
The effects of thermal annealing on Eu,Mg-codoped GaN (GaN:Eu,Mg) grown by organometallic vapor phase epitaxy were investigated. After annealing in nitrogen ambient, Eu-Mg related photoluminescence emission was quenched to 13 without a change in the spectral shape. The quenched emission recovered to 65 of the original intensity after a subsequent annealing in ammonia ambient. Combined excitation emission spectroscopy and time-resolved photoluminescence results revealed that the quenching behavior is attributed to a nonradiative process induced by unpassivated Mg acceptors in the relaxation of excited 4f electrons of Eu ions.
| Original language | English |
|---|---|
| Article number | 141904 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 14 |
| DOIs | |
| State | Published - Apr 8 2013 |
| Externally published | Yes |
Funding
This work was partly supported by a Grant-in-Aid for Creative Scientific Research (Grant No. 19GS1209) and a Grant-in-Aid for Scientific Research (S) (Grant No. 24226009) from the Japan Society for the Promotion of Science, and partly by the Global Centre of Excellence Program “Advanced Structural and Functional Materials Design” from the Ministry of Education, Culture, Sports, Science and Technology. J.P. and V.D. were supported by NSF through Grant ECCS-1140038.