Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

L. Liu; T. S. Kang; D. A. Cullen; L. Zhou; J. Kim; C. Y. Chang; E. A. Douglas; S. Jang; D. J. Smith; S. J. Pearton; W. J. Johnson; F. Ren

doi:10.1149/1.3629952

Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

L. Liu, T. S. Kang, D. A. Cullen, L. Zhou, J. Kim, C. Y. Chang, E. A. Douglas, S. Jang, D. J. Smith, S. J. Pearton, W. J. Johnson, F. Ren

Materials MicroAnalysis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.

Original language	English
Title of host publication	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
Publisher	Electrochemical Society Inc.
Pages	41-49
Number of pages	9
Edition	6
ISBN (Electronic)	9781607682608
ISBN (Print)	9781566779067
DOIs	https://doi.org/10.1149/1.3629952
State	Published - 2011
Event	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States Duration: Oct 9 2011 → Oct 14 2011

Publication series

Name	ECS Transactions
Number	6
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/9/11 → 10/14/11

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Liu, L., Kang, T. S., Cullen, D. A., Zhou, L., Kim, J., Chang, C. Y., Douglas, E. A., Jang, S., Smith, D. J., Pearton, S. J., Johnson, W. J., & Ren, F. (2011). Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. In State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 (6 ed., pp. 41-49). (ECS Transactions; Vol. 41, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3629952

@inproceedings{0ec5caec6be94e0786914a812c58af5a,

title = "Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress",

abstract = "The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.",

author = "L. Liu and Kang, {T. S.} and Cullen, {D. A.} and L. Zhou and J. Kim and Chang, {C. Y.} and Douglas, {E. A.} and S. Jang and Smith, {D. J.} and Pearton, {S. J.} and Johnson, {W. J.} and F. Ren",

year = "2011",

doi = "10.1149/1.3629952",

language = "English",

isbn = "9781566779067",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "6",

pages = "41--49",

booktitle = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53",

edition = "6",

note = "State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

}

Liu, L, Kang, TS, Cullen, DA, Zhou, L, Kim, J, Chang, CY, Douglas, EA, Jang, S, Smith, DJ, Pearton, SJ, Johnson, WJ & Ren, F 2011, Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. in State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6 edn, ECS Transactions, no. 6, vol. 41, Electrochemical Society Inc., pp. 41-49, State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting, Boston, MA, United States, 10/9/11. https://doi.org/10.1149/1.3629952

Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress. / Liu, L.; Kang, T. S.; Cullen, D. A. et al.
State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53. 6. ed. Electrochemical Society Inc., 2011. p. 41-49 (ECS Transactions; Vol. 41, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

AU - Liu, L.

AU - Kang, T. S.

AU - Cullen, D. A.

AU - Zhou, L.

AU - Kim, J.

AU - Chang, C. Y.

AU - Douglas, E. A.

AU - Jang, S.

AU - Smith, D. J.

AU - Pearton, S. J.

AU - Johnson, W. J.

AU - Ren, F.

PY - 2011

Y1 - 2011

N2 - The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.

AB - The effects of source field plates on AlGaN/GaN High Electron Mobility Transistor reliability under off-state stress conditions were investigated using step-stress cycling. The source field plate enhanced the drain breakdown voltage from 55V to 155V and the critical voltage for off-state gate stress from 40V to 65V, relative to devices without the field plate. Transmission electron microscopy (TEM) was used to examine the degradation of the gate contacts and revealed the presence of cracking due to the inverse piezoelectric effect that appeared on both source and drain side of the gate edges. A thin oxide layer was observed between the Ni gate contact and the Semiconductor, and both Ni and oxygen diffused into the AlGaN layer after stress.

UR - http://www.scopus.com/inward/record.url?scp=84863145088&partnerID=8YFLogxK

U2 - 10.1149/1.3629952

DO - 10.1149/1.3629952

M3 - Conference contribution

AN - SCOPUS:84863145088

SN - 9781566779067

T3 - ECS Transactions

SP - 41

EP - 49

BT - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53

PB - Electrochemical Society Inc.

T2 - State-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting

Y2 - 9 October 2011 through 14 October 2011

ER -

Effect of the source field plate on AlGaN/GaN high electron mobility transistors during off-state stress

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