Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu                         2                         ZnSnS                         4                          and Mo

Siarhei Zhuk; Terence Kin Shun Wong; Elizaveta Tyukalova; Asim Guchhait; Debbie Hwee Leng Seng; Sudhiranjan Tripathy; Ten It Wong; Mohit Sharma; Henry Medina; Martial Duchamp; Lydia Helena Wong; Goutam Kumar Dalapati

doi:10.1016/j.apsusc.2018.11.227

Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo

Siarhei Zhuk
, Terence Kin Shun Wong
, Elizaveta Tyukalova
, Asim Guchhait
, Debbie Hwee Leng Seng
, Sudhiranjan Tripathy
, Ten It Wong
, Mohit Sharma
, Henry Medina
, Martial Duchamp
, Lydia Helena Wong
, Goutam Kumar Dalapati

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS ₂ layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.

Original language	English
Pages (from-to)	277-288
Number of pages	12
Journal	Applied Surface Science
Volume	471
DOIs	https://doi.org/10.1016/j.apsusc.2018.11.227
State	Published - Mar 31 2019
Externally published	Yes

Keywords

Elemental out-diffusion
Interface engineering
MoS
Sputter-grown Cu ZnSnS
TaN intermediate layer
Void reduction

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10.1016/j.apsusc.2018.11.227

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Zhuk, S., Wong, T. K. S., Tyukalova, E., Guchhait, A., Seng, D. H. L., Tripathy, S., Wong, T. I., Sharma, M., Medina, H., Duchamp, M., Wong, L. H., & Dalapati, G. K. (2019). Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo Applied Surface Science, 471, 277-288. https://doi.org/10.1016/j.apsusc.2018.11.227

Zhuk, Siarhei ; Wong, Terence Kin Shun ; Tyukalova, Elizaveta et al. / Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo In: Applied Surface Science. 2019 ; Vol. 471. pp. 277-288.

@article{9f87a9832d924a14a6fd9f38f837ec00,

title = " Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu 2 ZnSnS 4 and Mo ",

abstract = " Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.",

keywords = "Elemental out-diffusion, Interface engineering, MoS, Sputter-grown Cu ZnSnS, TaN intermediate layer, Void reduction",

author = "Siarhei Zhuk and Wong, \{Terence Kin Shun\} and Elizaveta Tyukalova and Asim Guchhait and Seng, \{Debbie Hwee Leng\} and Sudhiranjan Tripathy and Wong, \{Ten It\} and Mohit Sharma and Henry Medina and Martial Duchamp and Wong, \{Lydia Helena\} and Dalapati, \{Goutam Kumar\}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = mar,

day = "31",

doi = "10.1016/j.apsusc.2018.11.227",

language = "English",

volume = "471",

pages = "277--288",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

Zhuk, S, Wong, TKS, Tyukalova, E, Guchhait, A, Seng, DHL, Tripathy, S, Wong, TI, Sharma, M, Medina, H, Duchamp, M, Wong, LH & Dalapati, GK 2019, ' Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo ', Applied Surface Science, vol. 471, pp. 277-288. https://doi.org/10.1016/j.apsusc.2018.11.227

Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo . / Zhuk, Siarhei; Wong, Terence Kin Shun; Tyukalova, Elizaveta et al.
In: Applied Surface Science, Vol. 471, 31.03.2019, p. 277-288.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu 2 ZnSnS 4 and Mo

AU - Zhuk, Siarhei

AU - Wong, Terence Kin Shun

AU - Tyukalova, Elizaveta

AU - Guchhait, Asim

AU - Seng, Debbie Hwee Leng

AU - Tripathy, Sudhiranjan

AU - Wong, Ten It

AU - Sharma, Mohit

AU - Medina, Henry

AU - Duchamp, Martial

AU - Wong, Lydia Helena

AU - Dalapati, Goutam Kumar

PY - 2019/3/31

Y1 - 2019/3/31

N2 - Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.

AB - Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.

KW - Elemental out-diffusion

KW - Interface engineering

KW - MoS

KW - Sputter-grown Cu ZnSnS

KW - TaN intermediate layer

KW - Void reduction

UR - https://www.scopus.com/pages/publications/85057629176

U2 - 10.1016/j.apsusc.2018.11.227

DO - 10.1016/j.apsusc.2018.11.227

M3 - Article

AN - SCOPUS:85057629176

SN - 0169-4332

VL - 471

SP - 277

EP - 288

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Zhuk S, Wong TKS, Tyukalova E, Guchhait A, Seng DHL, Tripathy S et al. Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo Applied Surface Science. 2019 Mar 31;471:277-288. doi: 10.1016/j.apsusc.2018.11.227

Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu ₂ ZnSnS ₄ and Mo

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Keywords

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