TY - JOUR
T1 - Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu 2 ZnSnS 4 and Mo
AU - Zhuk, Siarhei
AU - Wong, Terence Kin Shun
AU - Tyukalova, Elizaveta
AU - Guchhait, Asim
AU - Seng, Debbie Hwee Leng
AU - Tripathy, Sudhiranjan
AU - Wong, Ten It
AU - Sharma, Mohit
AU - Medina, Henry
AU - Duchamp, Martial
AU - Wong, Lydia Helena
AU - Dalapati, Goutam Kumar
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2019/3/31
Y1 - 2019/3/31
N2 - Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.
AB - Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, X-ray diffraction analysis, and scanning transmission electron microscopy (STEM). Time-of-flight secondary ion mass spectrometry (TOFSIMS), energy-dispersive X-ray spectroscopy (EDX), and electron energy loss spectroscopy (EELS) have been used for elemental analysis. Thin TaN IL shows chemical reactivity towards sulphur (S) vapor at 600 °C and the incorporation of S in TaN reduces the S concentration in Mo films at the sub-surface region and thus improves electrical conductivity of sulphurised Mo. The use of a non-stoichiometric quaternary compound CZTS target along with TaN IL enables to minimise thickness of MoS 2 layer and reduce void formation at the Mo/CZTS interface. Furthermore, incorporation of TaN IL improves scratch hardness of CZTS/Mo films to soda-lime glass substrate.
KW - Elemental out-diffusion
KW - Interface engineering
KW - MoS
KW - Sputter-grown Cu ZnSnS
KW - TaN intermediate layer
KW - Void reduction
UR - http://www.scopus.com/inward/record.url?scp=85057629176&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2018.11.227
DO - 10.1016/j.apsusc.2018.11.227
M3 - Article
AN - SCOPUS:85057629176
SN - 0169-4332
VL - 471
SP - 277
EP - 288
JO - Applied Surface Science
JF - Applied Surface Science
ER -