Effect of SiC Schottky and Si junction diode reverse recovery on boost converter

Veda Prakash Galigekere; Marian K. Kazimierczuk

doi:10.1109/EEIC.2007.4562634

Effect of SiC Schottky and Si junction diode reverse recovery on boost converter

Veda Prakash Galigekere, Marian K. Kazimierczuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power-factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1560, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.

Original language	English
Title of host publication	2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007
Pages	294-298
Number of pages	5
DOIs	https://doi.org/10.1109/EEIC.2007.4562634
State	Published - 2007
Externally published	Yes
Event	2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007 - Nashville, TN, United States Duration: Oct 22 2007 → Oct 24 2007

Publication series

Name	2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007

Conference

Conference	2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007
Country/Territory	United States
City	Nashville, TN
Period	10/22/07 → 10/24/07

Keywords

Boost DC-DC converter
Power-factor correction (PFC)
Silicon carbide schottky diodes
Silicon junction diodes
Soft-recovery diodes
Ultra-last recovery diodes

Access to Document

10.1109/EEIC.2007.4562634

Cite this

Galigekere, V. P., & Kazimierczuk, M. K. (2007). Effect of SiC Schottky and Si junction diode reverse recovery on boost converter. In 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007 (pp. 294-298). Article 4562634 (2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007). https://doi.org/10.1109/EEIC.2007.4562634

@inproceedings{1987df80cfa54785b17b38c4abe29b47,

title = "Effect of SiC Schottky and Si junction diode reverse recovery on boost converter",

abstract = "The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power-factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1560, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.",

keywords = "Boost DC-DC converter, Power-factor correction (PFC), Silicon carbide schottky diodes, Silicon junction diodes, Soft-recovery diodes, Ultra-last recovery diodes",

author = "Galigekere, {Veda Prakash} and Kazimierczuk, {Marian K.}",

year = "2007",

doi = "10.1109/EEIC.2007.4562634",

language = "English",

isbn = "1424404460",

series = "2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007",

pages = "294--298",

booktitle = "2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007",

note = "2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007 ; Conference date: 22-10-2007 Through 24-10-2007",

}

Galigekere, VP & Kazimierczuk, MK 2007, Effect of SiC Schottky and Si junction diode reverse recovery on boost converter. in 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007., 4562634, 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007, pp. 294-298, 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007, Nashville, TN, United States, 10/22/07. https://doi.org/10.1109/EEIC.2007.4562634

Effect of SiC Schottky and Si junction diode reverse recovery on boost converter. / Galigekere, Veda Prakash; Kazimierczuk, Marian K.
2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007. 2007. p. 294-298 4562634 (2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Galigekere, Veda Prakash

AU - Kazimierczuk, Marian K.

PY - 2007

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N2 - The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power-factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1560, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.

AB - The effect of diode reverse recovery on the performance of a pulse-width modulated (PWM) dc-dc boost converter employed for active power-factor correction (PFC) is analyzed. A 250 W boost converter is designed as per the requirements of a power-factor-corrector circuit and simulated using PSPICE. The effect of the diode reverse-recovery current on the MOSFET, employed as the switch in boost PFC circuit, is analyzed and depicted by the aid of simulated waveforms. The performance of three similarly rated diodes: CSD100600 silicon carbide Schottky diode, ultra-fast recovery silicon junction diode MUR1560, and soft-recovery silicon junction diode MSR860 are compared and the simulation results are presented.

KW - Boost DC-DC converter

KW - Power-factor correction (PFC)

KW - Silicon carbide schottky diodes

KW - Silicon junction diodes

KW - Soft-recovery diodes

KW - Ultra-last recovery diodes

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BT - 2007 Electrical Insulation Conference and Electrical Manufacturing Expo, EEIC 2007

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ER -

Effect of SiC Schottky and Si junction diode reverse recovery on boost converter

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