Abstract
Ferroelectric PZT thin films on thin RuO2 (10, 30, 50 nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a 10 nm RuO2/Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.
| Original language | English |
|---|---|
| Pages (from-to) | 131-136 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 493 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 2 1997 |
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