Effect of RuO2/Pt hybrid bottom electrode structure on the microstructure and ferroelectric properties of sol-gel derived PZT thin films

S. H. Kim; J. G. Hong; J. C. Gunter; H. Y. Lee; S. K. Streiffer; A. I. Kingon

Effect of RuO₂/Pt hybrid bottom electrode structure on the microstructure and ferroelectric properties of sol-gel derived PZT thin films

S. H. Kim, J. G. Hong, J. C. Gunter, H. Y. Lee, S. K. Streiffer, A. I. Kingon

Research output: Contribution to journal › Conference article › peer-review

16 Scopus citations

Abstract

Ferroelectric PZT thin films on thin RuO₂ (10, 30, 50 nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a 10 nm RuO₂/Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO₂/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and only below 13-15% degradation was observed up to 10¹⁰ cycles. Thicker RuO₂ layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Original language	English
Pages (from-to)	131-136
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	493
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 2 1997

Cite this

@article{48dcf745af4c4104905cac093406f676,

title = "Effect of RuO2/Pt hybrid bottom electrode structure on the microstructure and ferroelectric properties of sol-gel derived PZT thin films",

abstract = "Ferroelectric PZT thin films on thin RuO2 (10, 30, 50 nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a 10 nm RuO2/Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.",

author = "Kim, {S. H.} and Hong, {J. G.} and Gunter, {J. C.} and Lee, {H. Y.} and Streiffer, {S. K.} and Kingon, {A. I.}",

year = "1998",

language = "English",

volume = "493",

pages = "131--136",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 01-12-1997 Through 02-12-1997",

}

TY - JOUR

T1 - Effect of RuO2/Pt hybrid bottom electrode structure on the microstructure and ferroelectric properties of sol-gel derived PZT thin films

AU - Kim, S. H.

AU - Hong, J. G.

AU - Gunter, J. C.

AU - Lee, H. Y.

AU - Streiffer, S. K.

AU - Kingon, A. I.

PY - 1998

Y1 - 1998

N2 - Ferroelectric PZT thin films on thin RuO2 (10, 30, 50 nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a 10 nm RuO2/Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

AB - Ferroelectric PZT thin films on thin RuO2 (10, 30, 50 nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a 10 nm RuO2/Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5 V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

UR - http://www.scopus.com/inward/record.url?scp=0031651537&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031651537

SN - 0272-9172

VL - 493

SP - 131

EP - 136

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 1 December 1997 through 2 December 1997

ER -

Effect of RuO₂/Pt hybrid bottom electrode structure on the microstructure and ferroelectric properties of sol-gel derived PZT thin films

Abstract

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