TY - JOUR
T1 - Effect of oxide aperture on temperature rise in high power vertical-cavity surface-emitting laser
AU - Liu, Di
AU - Ning, Yongqiang
AU - Qin, Li
AU - Zhang, Jinlong
AU - Zhang, Xing
AU - Liu, Yun
AU - Wang, Lijun
PY - 2012/5
Y1 - 2012/5
N2 - Thermal characteristics of single vertical-cavity surface-emitting laser (VCSEL) devices with different oxide apertures are studied experimentally in order to get better beam quality and higher output power by choosing appropriate size of the oxide aperture. Single devices with oxide apertures of 415, 386, and 316 μm are made by controlling the oxidation time. Diameters of the mesa and the P type contact are 450 μm and 400 μm, respectively. Thermal resistances of three kinds of devices are measured experimentally based on their different output characteristics under continuous-wave (CW) operation at room temperature. It is found that the smaller the oxide aperture is, the larger the thermal resistance of the device becomes. Temperature rise caused by self heating of injection current is obtained by comparing the relationship of current, wavelength and temperature. At a current of 1 A, the temperature of devices are 32.4°C, 35.2°C and 76.4°C corresponding to the oxide aperture of 415, 386, and 316 μm, respectively.
AB - Thermal characteristics of single vertical-cavity surface-emitting laser (VCSEL) devices with different oxide apertures are studied experimentally in order to get better beam quality and higher output power by choosing appropriate size of the oxide aperture. Single devices with oxide apertures of 415, 386, and 316 μm are made by controlling the oxidation time. Diameters of the mesa and the P type contact are 450 μm and 400 μm, respectively. Thermal resistances of three kinds of devices are measured experimentally based on their different output characteristics under continuous-wave (CW) operation at room temperature. It is found that the smaller the oxide aperture is, the larger the thermal resistance of the device becomes. Temperature rise caused by self heating of injection current is obtained by comparing the relationship of current, wavelength and temperature. At a current of 1 A, the temperature of devices are 32.4°C, 35.2°C and 76.4°C corresponding to the oxide aperture of 415, 386, and 316 μm, respectively.
KW - Lasers
KW - Oxide aperture
KW - Temperature rise
KW - Thermal resistance
KW - Vertical cavity surface emitting laser
UR - https://www.scopus.com/pages/publications/84863195598
U2 - 10.3788/CJL201239.0502005
DO - 10.3788/CJL201239.0502005
M3 - Article
AN - SCOPUS:84863195598
SN - 0258-7025
VL - 39
JO - Zhongguo Jiguang/Chinese Journal of Lasers
JF - Zhongguo Jiguang/Chinese Journal of Lasers
IS - 5
M1 - 0502005
ER -