Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors

R. Krishnan; H. Tong; Z. Li; C. Muzzillo; W. K. Kim; E. A. Payzant; C. Adelham; J. Winkler; T. J. Anderson

doi:10.1109/PVSC.2013.6744175

Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors

R. Krishnan, H. Tong, Z. Li, C. Muzzillo, W. K. Kim, E. A. Payzant, C. Adelham, J. Winkler, T. J. Anderson

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at %)/Na-free glass. The precursor film was constituted with CuIn, In, Cu9Ga4, Cu3Ga, Cu ₁₆In₉ and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ∼450°C for samples deposited on 5 at % Na-doped Mo substrates. MoSe2 formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320°C to estimate the rate constants.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	392-397
Number of pages	6
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744175
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	06/16/13 → 06/21/13

Keywords

CIGS
HTXRD
Na effect
Selenization

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10.1109/PVSC.2013.6744175

Cite this

Krishnan, R., Tong, H., Li, Z., Muzzillo, C., Kim, W. K., Payzant, E. A., Adelham, C., Winkler, J., & Anderson, T. J. (2013). Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 392-397). Article 6744175 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744175

@inproceedings{59f1bcfe44be4888b13b44368ff994cf,

title = "Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors",

abstract = "Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at \%)/Na-free glass. The precursor film was constituted with CuIn, In, Cu9Ga4, Cu3Ga, Cu 16In9 and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ∼450°C for samples deposited on 5 at \% Na-doped Mo substrates. MoSe2 formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320°C to estimate the rate constants.",

keywords = "CIGS, HTXRD, Na effect, Selenization",

author = "R. Krishnan and H. Tong and Z. Li and C. Muzzillo and Kim, \{W. K.\} and Payzant, \{E. A.\} and C. Adelham and J. Winkler and Anderson, \{T. J.\}",

year = "2013",

doi = "10.1109/PVSC.2013.6744175",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "392--397",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Krishnan, R, Tong, H, Li, Z, Muzzillo, C, Kim, WK, Payzant, EA, Adelham, C, Winkler, J & Anderson, TJ 2013, Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744175, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 392-397, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 06/16/13. https://doi.org/10.1109/PVSC.2013.6744175

Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors. / Krishnan, R.; Tong, H.; Li, Z. et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 392-397 6744175 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors

AU - Krishnan, R.

AU - Tong, H.

AU - Li, Z.

AU - Muzzillo, C.

AU - Kim, W. K.

AU - Payzant, E. A.

AU - Adelham, C.

AU - Winkler, J.

AU - Anderson, T. J.

PY - 2013

Y1 - 2013

N2 - Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at %)/Na-free glass. The precursor film was constituted with CuIn, In, Cu9Ga4, Cu3Ga, Cu 16In9 and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ∼450°C for samples deposited on 5 at % Na-doped Mo substrates. MoSe2 formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320°C to estimate the rate constants.

AB - Reaction pathways were followed for selenization of CuGa/In precursor structures using in-situ high temperature X-ray diffraction (HTXRD). Precursor films were deposited on Na-free and Na-doped Mo (3 and 5 at %)/Na-free glass. The precursor film was constituted with CuIn, In, Cu9Ga4, Cu3Ga, Cu 16In9 and Mo. HTXRD measurements during temperature ramp selenization showed CIS formation occurs first, followed by CGS formation, and then mixing on the group III sub-lattice to form CIGS. CIGS formation was observed to be complete at ∼450°C for samples deposited on 5 at % Na-doped Mo substrates. MoSe2 formation was evidenced after the CIGS synthesis reaction was complete. The Ga distribution in the annealed CIGS was determined by Rietveld refinement. Isothermal reaction studies were conducted for CIGS (112) formation in the temperature range 260-320°C to estimate the rate constants.

KW - CIGS

KW - HTXRD

KW - Na effect

KW - Selenization

UR - https://www.scopus.com/pages/publications/84896458105

U2 - 10.1109/PVSC.2013.6744175

DO - 10.1109/PVSC.2013.6744175

M3 - Conference contribution

AN - SCOPUS:84896458105

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 392

EP - 397

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Krishnan R, Tong H, Li Z, Muzzillo C, Kim WK, Payzant EA et al. Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 392-397. 6744175. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744175

Effect of Na-doped Mo on selenization pathways for CuGa/In metallic precursors

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