@article{bfa1afb193c645db937e4c481af7282d,
title = "Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors",
abstract = "The changes in direct current performance of circular-shaped AlGaN/GaN high electron mobility transistors (HEMTs) after 60Co γ-irradiation doses of 50, 300, 450, or 700 Gy were measured. The main effects on the HEMTs after irradiation were increases of both drain current and electron mobility. Compton electrons induced from the absorption of the γ-rays appear to generate donor type defects. Drain current dispersions of ∼5% were observed during gate lag measurements due to the formation of a virtual gate between the gate and drain resulting from the defects generated during γ-irradiation.",
author = "Hwang, {Ya Hsi} and Hsieh, {Yueh Ling} and Lei Lei and Shun Li and Fan Ren and Pearton, {Stephen J.} and Anupama Yadav and Casey Schwarz and Max Shatkhin and Luther Wang and Elena Flitsiyan and Leonid Chernyak and Baca, {Albert G.} and Allerman, {Andrew A.} and Sanchez, {Carlos A.} and Kravchenko, {I. I.}",
year = "2014",
month = may,
doi = "10.1116/1.4868632",
language = "English",
volume = "32",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "3",
}