Abstract
During oxidation at 1000 °C in dry, flowing O2, β-NiAl first forms an oxide scale of primarily θ-Al2O3. After 1-4 hr of continued exposure this metastable oxide transforms into the stable α-Al2O3 structure. An implant of 2×1016 Y/cm2 at 70 kV was found to stabilize the first-forming θ-Al2O3 scale up to 100 hr at 1000 °C. β-NiAl was also implanted with Al and Cr to study the effect of the implantation damage and of another more noble element on the oxidation behavior. At 1200 °C, only a short term effect of the Y-implant was observed.
| Original language | English |
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| Pages (from-to) | 1013-1018 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 288 |
| State | Published - 1993 |
| Externally published | Yes |
| Event | Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA Duration: Nov 30 1992 → Dec 3 1992 |