Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices

Y. T. Kim; C. W. Lee; D. S. Shin; H. N. Lee

Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices

Y. T. Kim, C. W. Lee, D. S. Shin, H. N. Lee

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Current and voltage characteristics of MEFISFETs using different insulators show that CeO₂ or Y₂O₃ insulator performs excellent role to prevent the reduction of coercive field in the SrBi₂Ta₂O₉ (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO₂ or Y₂O₃ insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10^-4 A. Whereas, the memory window of the MEFISFET using SiO₂ is 0.25 V at the same gate voltage and the drain current level is only 10^-6 A.

Original language	English
Pages	35-38
Number of pages	4
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: Aug 24 1998 → Aug 27 1998

Conference

Conference	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	08/24/98 → 08/27/98

Cite this

@conference{414060a4d5494b3c90604a7317ac1517,

title = "Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices",

abstract = "Current and voltage characteristics of MEFISFETs using different insulators show that CeO2 or Y2O3 insulator performs excellent role to prevent the reduction of coercive field in the SrBi2Ta2O9 (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO2 or Y2O3 insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10-4 A. Whereas, the memory window of the MEFISFET using SiO2 is 0.25 V at the same gate voltage and the drain current level is only 10-6 A.",

author = "Kim, {Y. T.} and Lee, {C. W.} and Shin, {D. S.} and Lee, {H. N.}",

year = "1998",

language = "English",

pages = "35--38",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

}

Kim, YT, Lee, CW, Shin, DS & Lee, HN 1998, 'Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices', Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, 08/24/98 - 08/27/98 pp. 35-38.

Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices. / Kim, Y. T.; Lee, C. W.; Shin, D. S. et al.
1998. 35-38 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices

AU - Kim, Y. T.

AU - Lee, C. W.

AU - Shin, D. S.

AU - Lee, H. N.

PY - 1998

Y1 - 1998

N2 - Current and voltage characteristics of MEFISFETs using different insulators show that CeO2 or Y2O3 insulator performs excellent role to prevent the reduction of coercive field in the SrBi2Ta2O9 (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO2 or Y2O3 insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10-4 A. Whereas, the memory window of the MEFISFET using SiO2 is 0.25 V at the same gate voltage and the drain current level is only 10-6 A.

AB - Current and voltage characteristics of MEFISFETs using different insulators show that CeO2 or Y2O3 insulator performs excellent role to prevent the reduction of coercive field in the SrBi2Ta2O9 (SBT) film and the interaction between the SBT and Si. The memory window of the MEFISFET using CeO2 or Y2O3 insulator is about 1.25 V at the gate voltage of 5 V, and its drain current level (write/read state) is 10-4 A. Whereas, the memory window of the MEFISFET using SiO2 is 0.25 V at the same gate voltage and the drain current level is only 10-6 A.

UR - http://www.scopus.com/inward/record.url?scp=0032283021&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032283021

SP - 35

EP - 38

T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Effect of insulator on memory window of metal-ferroelectric-insulator-semiconductor-field effect transistor (MEFISFET)-non destructive readout memory devices

Abstract

Conference

Other files and links

Fingerprint

Cite this