Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors

Y. H. Hwang; Y. L. Hsieh; L. Lei; S. Li; F. Ren; S. J. Pearton; A. Yadav; C. Schwarz; M. Shatkhin; L. Wang; E. Flitsiyan; L. Chernyak; Albert G. Baca; Andrew A. Allerman; Carlos A. Sanchez; I. I. Kravchenko

doi:10.1149/06104.0205ecst

Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors

Y. H. Hwang
, Y. L. Hsieh
, L. Lei
, S. Li
, F. Ren
, S. J. Pearton
, A. Yadav
, C. Schwarz
, M. Shatkhin
, L. Wang
, E. Flitsiyan
, L. Chernyak
, Albert G. Baca
, Andrew A. Allerman
, Carlos A. Sanchez
, I. I. Kravchenko

Nanofabrication Research Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of low dose gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors weas investigated. The drain saturation current (IDS) increased 11.44% after irradiation with a dose of 700 Gy. Sheet resistance (Rs) was measured from transfer line method and it decreased 3.6% after irradiation. By extracting the resistance between source and drain in the drain I-V curve and combining with TLM data, mobility was found to increase 34.53% after irradiation. The mobility increase may come from the donor-type defects or the strain relaxation effect. Gate lag measurement was also performed and 5% current dispersion was found after irradiation with the dose of 700 Gy, indicating there were more defects generated after irradiation.

Original language	English
Pages (from-to)	205-210
Number of pages	6
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0205ecst
State	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014

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Hwang, Y. H., Hsieh, Y. L., Lei, L., Li, S., Ren, F., Pearton, S. J., Yadav, A., Schwarz, C., Shatkhin, M., Wang, L., Flitsiyan, E., Chernyak, L., Baca, A. G., Allerman, A. A., Sanchez, C. A., & Kravchenko, I. I. (2014). Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors. ECS Transactions, 61(4), 205-210. https://doi.org/10.1149/06104.0205ecst

@article{40c567d2690d415896cb87d9e6a7bcbd,

title = "Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors",

abstract = "The effect of low dose gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors weas investigated. The drain saturation current (IDS) increased 11.44\% after irradiation with a dose of 700 Gy. Sheet resistance (Rs) was measured from transfer line method and it decreased 3.6\% after irradiation. By extracting the resistance between source and drain in the drain I-V curve and combining with TLM data, mobility was found to increase 34.53\% after irradiation. The mobility increase may come from the donor-type defects or the strain relaxation effect. Gate lag measurement was also performed and 5\% current dispersion was found after irradiation with the dose of 700 Gy, indicating there were more defects generated after irradiation.",

author = "Hwang, \{Y. H.\} and Hsieh, \{Y. L.\} and L. Lei and S. Li and F. Ren and Pearton, \{S. J.\} and A. Yadav and C. Schwarz and M. Shatkhin and L. Wang and E. Flitsiyan and L. Chernyak and Baca, \{Albert G.\} and Allerman, \{Andrew A.\} and Sanchez, \{Carlos A.\} and Kravchenko, \{I. I.\}",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06104.0205ecst",

language = "English",

volume = "61",

pages = "205--210",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "The Electrochemical Society",

number = "4",

}

Hwang, YH, Hsieh, YL, Lei, L, Li, S, Ren, F, Pearton, SJ, Yadav, A, Schwarz, C, Shatkhin, M, Wang, L, Flitsiyan, E, Chernyak, L, Baca, AG, Allerman, AA, Sanchez, CA & Kravchenko, II 2014, 'Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors', ECS Transactions, vol. 61, no. 4, pp. 205-210. https://doi.org/10.1149/06104.0205ecst

TY - JOUR

T1 - Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors

AU - Hwang, Y. H.

AU - Hsieh, Y. L.

AU - Lei, L.

AU - Li, S.

AU - Ren, F.

AU - Pearton, S. J.

AU - Yadav, A.

AU - Schwarz, C.

AU - Shatkhin, M.

AU - Wang, L.

AU - Flitsiyan, E.

AU - Chernyak, L.

AU - Baca, Albert G.

AU - Allerman, Andrew A.

AU - Sanchez, Carlos A.

AU - Kravchenko, I. I.

PY - 2014

Y1 - 2014

N2 - The effect of low dose gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors weas investigated. The drain saturation current (IDS) increased 11.44% after irradiation with a dose of 700 Gy. Sheet resistance (Rs) was measured from transfer line method and it decreased 3.6% after irradiation. By extracting the resistance between source and drain in the drain I-V curve and combining with TLM data, mobility was found to increase 34.53% after irradiation. The mobility increase may come from the donor-type defects or the strain relaxation effect. Gate lag measurement was also performed and 5% current dispersion was found after irradiation with the dose of 700 Gy, indicating there were more defects generated after irradiation.

AB - The effect of low dose gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors weas investigated. The drain saturation current (IDS) increased 11.44% after irradiation with a dose of 700 Gy. Sheet resistance (Rs) was measured from transfer line method and it decreased 3.6% after irradiation. By extracting the resistance between source and drain in the drain I-V curve and combining with TLM data, mobility was found to increase 34.53% after irradiation. The mobility increase may come from the donor-type defects or the strain relaxation effect. Gate lag measurement was also performed and 5% current dispersion was found after irradiation with the dose of 700 Gy, indicating there were more defects generated after irradiation.

UR - https://www.scopus.com/pages/publications/84925133877

U2 - 10.1149/06104.0205ecst

DO - 10.1149/06104.0205ecst

M3 - Conference article

AN - SCOPUS:84925133877

SN - 1938-5862

VL - 61

SP - 205

EP - 210

JO - ECS Transactions

JF - ECS Transactions

IS - 4

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors

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