Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors

Y. H. Hwang, Y. L. Hsieh, L. Lei, S. Li, F. Ren, S. J. Pearton, A. Yadav, C. Schwarz, M. Shatkhin, L. Wang, E. Flitsiyan, L. Chernyak, Albert G. Baca, Andrew A. Allerman, Carlos A. Sanchez, I. I. Kravchenko

Research output: Contribution to journalConference articlepeer-review

Abstract

The effect of low dose gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors weas investigated. The drain saturation current (IDS) increased 11.44% after irradiation with a dose of 700 Gy. Sheet resistance (Rs) was measured from transfer line method and it decreased 3.6% after irradiation. By extracting the resistance between source and drain in the drain I-V curve and combining with TLM data, mobility was found to increase 34.53% after irradiation. The mobility increase may come from the donor-type defects or the strain relaxation effect. Gate lag measurement was also performed and 5% current dispersion was found after irradiation with the dose of 700 Gy, indicating there were more defects generated after irradiation.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalECS Transactions
Volume61
Issue number4
DOIs
StatePublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

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