Effect of Flow Rate, Nitrogen Precursor and Diluent on Si₂N₂O Deposition by HYSYCVD

The effects of flow rate, nitrogen precursor and diluent on the synthesis of Si₂N₂O by the hybrid precursor chemical vapor deposition method (HYSYCVD) were investigated. Based on an L9 Taguchi experimental design, the processing parameters were studied at three levels: flow rate (10, 15 and 20 cm³/min), nitrogen precursor (UHP-N₂, 50% N2-balance ammonia, and 5 % N2-balance ammonia), and diluent (Ar, He, and with no use of diluent). Anova shows that flow rate of nitrogen precursor has the highest relative contribution (46 %) to the variability in the formation of Si₂N₂O, followed by the type of nitrogen precursor (44 %) and, the type of diluent (8 %). Deposition of Si₂N₂O is maximized by using 10 cm³/min of UHP-N₂ and with no use of diluent. Results from the characterization of additional trials by XRD and SEM show that in the temperature range 1153.15-1603.15 K and processing times between 0-70 min, Si₂N₂O is formed as spheres, rough and fine fibers.