TY - GEN
T1 - Effect of flow rate, nitrogen precursor and diluent on Si2N 2O deposition by HYSYCVD
AU - Leal-Cruz, A. L.
AU - Pech-Canul, M. I.
AU - Lara-Curzio, E.
AU - Trejo, R. M.
AU - Peascoe, R.
PY - 2009
Y1 - 2009
N2 - The effects of flow rate, nitrogen precursor and diluent on the synthesis of Si2N2O by the hybrid precursor chemical vapor deposition method (HYSYCVD) were investigated. Based on an L9 Taguchi experimental design, the processing parameters were studied at three levels: flow rate (10, 15 and 20 cm3/min), nitrogen precursor (UHP-N 2, 50% N2-balance ammonia, and 5 % N2-balance ammonia), and diluent (Ar, He, and with no use of diluent). Anova shows that flow rate of nitrogen precursor has the highest relative contribution (46 %) to the variability in the formation of Si2N2O, followed by the type of nitrogen precursor (44 %) and, the type of diluent (8 %). Deposition of Si2N2O is maximized by using 10 cm3/min of UHP-N2 and with no use of diluent. Results from the characterization of additional trials by XRD and SEM show that in the temperature range 1153.15-1603.15 K and processing times between 0-70 min, Si2N 2O is formed as spheres, rough and fine fibers.
AB - The effects of flow rate, nitrogen precursor and diluent on the synthesis of Si2N2O by the hybrid precursor chemical vapor deposition method (HYSYCVD) were investigated. Based on an L9 Taguchi experimental design, the processing parameters were studied at three levels: flow rate (10, 15 and 20 cm3/min), nitrogen precursor (UHP-N 2, 50% N2-balance ammonia, and 5 % N2-balance ammonia), and diluent (Ar, He, and with no use of diluent). Anova shows that flow rate of nitrogen precursor has the highest relative contribution (46 %) to the variability in the formation of Si2N2O, followed by the type of nitrogen precursor (44 %) and, the type of diluent (8 %). Deposition of Si2N2O is maximized by using 10 cm3/min of UHP-N2 and with no use of diluent. Results from the characterization of additional trials by XRD and SEM show that in the temperature range 1153.15-1603.15 K and processing times between 0-70 min, Si2N 2O is formed as spheres, rough and fine fibers.
UR - http://www.scopus.com/inward/record.url?scp=70349155082&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:70349155082
SN - 9780470408452
T3 - Ceramic Transactions
SP - 35
EP - 42
BT - Processing and Properties of Advanced Ceramics and Composites- A Collection of Papers Presented at the 2008 Materials Science and Technology Conference, MS and T'08
T2 - 2008 Materials Science and Technology 2008 Conference , MS and T'08
Y2 - 5 October 2008 through 9 October 2008
ER -