Effect of deposition conditions and annealing on W Schottky contacts on n-GaN

R. Mehandru, S. Kang, S. Kim, F. Ren, I. Kravchenko, W. Lewis, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Sputter-deposited W Schottky contacts on n-GaN show as-deposited barrier heights (φb) of 0.80eV for optimized conditions. Subsequent annealing at 500-600°C reduces the barrier height to ∼0.4eV, its theroretical value from the relation φb = φm- χs (where φm is the metal work function and χs the electron affinity of GaN). The lowest specific resistance for the W is obtained for high power, low pressure (< 20mTorr) deposition conditions where the incident ion energy and deposition rate are optimized to minimize damage to the GaN surface. At higher annealing temperatures the W reacts with the GaN to form β-phase W2N.

Original languageEnglish
Pages (from-to)95-98
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume7
Issue number1-2
DOIs
StatePublished - Feb 2004
Externally publishedYes

Funding

The work at UF is partially supported by NASA Kennedy Space Center (NAG10-316, Dr. Daniel Fitch) and the UCF-UF Space Research Initiative, and also by NSF DMR-0101438.

Keywords

  • GaN
  • Schottky contact
  • Thermal stability
  • W contact

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